Abstract
UNSW School of Photovoltaic & Renewable Energy Engineering
Active Electronic Impurity Doping of Silicon Nanovolumes: Failure and Alternatives
Dirk Konig - UNSW SPREE - UNSW IMDC
For ultrasmall Si nanovolumes (Si-NVs) like Silicon (Si) nano crystals (NCs), wires, wells and FETs in sub-22 nm technology nodes for Ultra-Large Scale Integration (ULSI), impurity doping is a major challenge. After a brief assessment of literature data, I will present own theory and experimental results which elucidate the reasons for impurity doping to fail [1].
As first alternative, I show that Si dioxide (SiO2) and nitride (Si3N4) create substantial energy offsets of electronic states in ultrasmall Si-NVs [2,3]. I describe the interface impact as nanoscopic field effect and show that the energy offset is very robust and controllable. As application example, I propose an un-doped CMOS-able and CMOS technology-compatible Si-Nanowire MISFET.
Modulation doping of the embedding Si-based dielectric in another alternative to impurity doping of ultrasmall Si-NVs. I report on modulation doping of aluminium gallium nitride (AlxGa1−xN) barrier layers adjacent to Si- and Ge-rich Si3N4 by excess Si in-situ with the segregation anneal for Si NC formation [4], rendering it suitable as barrier for Si and Ge nanodot superlattices.
Finally, I present a glimpse on preliminary results of modu-lation-doped SiO2 and its application to ULSI and HIT solar cells. Latter show that combining excellent field effect passivation with high carrier selectivity and conductivity can be achieved within one material which is superior to ultrathin amorphous Si as used in current HIT cell technology.
[1] Sci. Rep. (Nature) 5, 09702 (2015)
[2] Adv. Mater. Interfaces 1, 201400359 (2014)
[3] Phys. Rev. B 78, 035339 (2008)
[4] AIP Advances 3, 012109 (2013)
Active Electronic Impurity Doping of Silicon Nanovolumes: Failure and Alternatives
Dirk Konig - UNSW SPREE - UNSW IMDC
For ultrasmall Si nanovolumes (Si-NVs) like Silicon (Si) nano crystals (NCs), wires, wells and FETs in sub-22 nm technology nodes for Ultra-Large Scale Integration (ULSI), impurity doping is a major challenge. After a brief assessment of literature data, I will present own theory and experimental results which elucidate the reasons for impurity doping to fail [1].
As first alternative, I show that Si dioxide (SiO2) and nitride (Si3N4) create substantial energy offsets of electronic states in ultrasmall Si-NVs [2,3]. I describe the interface impact as nanoscopic field effect and show that the energy offset is very robust and controllable. As application example, I propose an un-doped CMOS-able and CMOS technology-compatible Si-Nanowire MISFET.
Modulation doping of the embedding Si-based dielectric in another alternative to impurity doping of ultrasmall Si-NVs. I report on modulation doping of aluminium gallium nitride (AlxGa1−xN) barrier layers adjacent to Si- and Ge-rich Si3N4 by excess Si in-situ with the segregation anneal for Si NC formation [4], rendering it suitable as barrier for Si and Ge nanodot superlattices.
Finally, I present a glimpse on preliminary results of modu-lation-doped SiO2 and its application to ULSI and HIT solar cells. Latter show that combining excellent field effect passivation with high carrier selectivity and conductivity can be achieved within one material which is superior to ultrathin amorphous Si as used in current HIT cell technology.
[1] Sci. Rep. (Nature) 5, 09702 (2015)
[2] Adv. Mater. Interfaces 1, 201400359 (2014)
[3] Phys. Rev. B 78, 035339 (2008)
[4] AIP Advances 3, 012109 (2013)
| Original language | English |
|---|---|
| Publisher | UNSW |
| Publication status | Published - 19 Nov 2015 |
| Externally published | Yes |