Advantages of Zn 1.25Sb 2Te 3 material for phase change memory

Guoxiang Wang; Qiuhua Nie; Xiang Shen; Rongping Wang; Liangcai Wu; Yegang Lv; Jing Fu; Tiefeng Xu; Shixun Dai

doi:10.1016/j.matlet.2012.08.003

Advantages of Zn _1.25Sb ₂Te ₃ material for phase change memory

Guoxiang Wang^*, Qiuhua Nie, Xiang Shen, Rongping Wang, Liangcai Wu, Yegang Lv, Jing Fu, Tiefeng Xu, Shixun Dai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The thermal and electrical properties of Zn _1.25Sb ₂Te ₃ film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge ₂Sb ₂Te ₅, Zn _1.25Sb ₂Te ₃ film exhibits a higher crystallization temperature (∼200°C), greater activation energy (2.71 eV), and better data retention of 10 years at 105°C. In addition, higher crystalline resistance and better resistance contrast are helpful to reduce RESET current and achieve a higher On/OFF ratio of PCM, respectively. Raman spectra of crystalline thin films suggests that the local bonding arrangement around Sb atoms changes; Sb ₂Te ₃ component is thus mainly responsible for the phase transition in Zn _1.25Sb ₂Te ₃ alloys.

Original language	English
Pages (from-to)	135-138
Number of pages	4
Journal	Materials Letters
Volume	87
DOIs	https://doi.org/10.1016/j.matlet.2012.08.003
Publication status	Published - 15 Nov 2012

Access to Document

10.1016/j.matlet.2012.08.003

Cite this

@article{65b4fa65151844a0b2aa196b1e9ba5a7,

title = "Advantages of Zn 1.25Sb 2Te 3 material for phase change memory",

abstract = "The thermal and electrical properties of Zn 1.25Sb 2Te 3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge 2Sb 2Te 5, Zn 1.25Sb 2Te 3 film exhibits a higher crystallization temperature (∼200°C), greater activation energy (2.71 eV), and better data retention of 10 years at 105°C. In addition, higher crystalline resistance and better resistance contrast are helpful to reduce RESET current and achieve a higher On/OFF ratio of PCM, respectively. Raman spectra of crystalline thin films suggests that the local bonding arrangement around Sb atoms changes; Sb 2Te 3 component is thus mainly responsible for the phase transition in Zn 1.25Sb 2Te 3 alloys.",

keywords = "Electrical properties, Phase transformation, Thermal properties, Thin films",

author = "Guoxiang Wang and Qiuhua Nie and Xiang Shen and Rongping Wang and Liangcai Wu and Yegang Lv and Jing Fu and Tiefeng Xu and Shixun Dai",

year = "2012",

month = nov,

day = "15",

doi = "10.1016/j.matlet.2012.08.003",

language = "English",

volume = "87",

pages = "135--138",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Advantages of Zn 1.25Sb 2Te 3 material for phase change memory

AU - Wang, Guoxiang

AU - Nie, Qiuhua

AU - Shen, Xiang

AU - Wang, Rongping

AU - Wu, Liangcai

AU - Lv, Yegang

AU - Fu, Jing

AU - Xu, Tiefeng

AU - Dai, Shixun

PY - 2012/11/15

Y1 - 2012/11/15

N2 - The thermal and electrical properties of Zn 1.25Sb 2Te 3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge 2Sb 2Te 5, Zn 1.25Sb 2Te 3 film exhibits a higher crystallization temperature (∼200°C), greater activation energy (2.71 eV), and better data retention of 10 years at 105°C. In addition, higher crystalline resistance and better resistance contrast are helpful to reduce RESET current and achieve a higher On/OFF ratio of PCM, respectively. Raman spectra of crystalline thin films suggests that the local bonding arrangement around Sb atoms changes; Sb 2Te 3 component is thus mainly responsible for the phase transition in Zn 1.25Sb 2Te 3 alloys.

AB - The thermal and electrical properties of Zn 1.25Sb 2Te 3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge 2Sb 2Te 5, Zn 1.25Sb 2Te 3 film exhibits a higher crystallization temperature (∼200°C), greater activation energy (2.71 eV), and better data retention of 10 years at 105°C. In addition, higher crystalline resistance and better resistance contrast are helpful to reduce RESET current and achieve a higher On/OFF ratio of PCM, respectively. Raman spectra of crystalline thin films suggests that the local bonding arrangement around Sb atoms changes; Sb 2Te 3 component is thus mainly responsible for the phase transition in Zn 1.25Sb 2Te 3 alloys.

KW - Electrical properties

KW - Phase transformation

KW - Thermal properties

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=84865840963&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2012.08.003

DO - 10.1016/j.matlet.2012.08.003

M3 - Article

SN - 0167-577X

VL - 87

SP - 135

EP - 138

JO - Materials Letters

JF - Materials Letters

ER -

Advantages of Zn _1.25Sb ₂Te ₃ material for phase change memory

Abstract

Access to Document

Other files and links

Fingerprint

Cite this