AlInAsSb for GaSb-based multi-junction solar cells

J. Tournet, Y. Rouillard, E. Tournié

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Citations (Scopus)

Abstract

Bandgap engineering, by means of alloying or inserting nanostructures, is the bedrock of high efficiency photovoltaics. III-V quaternary alloys in particular enable bandgap tailoring of a multi-junction subcell while conserving a single lattice parameter. Among the possible candidates, AlInAsSb could in theory reach the widest range of bandgap energies while being lattice-matched to InP or GaSb. Although these material systems are still emerging photovoltaic segments, they do offer advantages for multi-junction design. GaSbbased structures in particular can make use of highly efficient GaSb/InAs tunnel junctions to connect the subcells. There has been only little information concerning GaSb-lattice matched AlInAsSb in the literature. The alloy's miscibility gap can be circumvented by the use of non-equilibrium techniques. Nevertheless, appropriate growth conditions remain to be found in order to produce a stable alloy. Furthermore, the abnormally low bandgap energies reported for the material need to be confirmed and interpreted with a multi-junction perspective. In this work, we propose a tandem structure made of an AlInAsSb top cell and a GaSb bottom cell. An epitaxy study of the AlInAsSb alloy lattice-matched to GaSb was first performed. The subcells were then grown and processed. The GaSb subcell yielded an efficiency of 5.9% under 1 sun and the tandem cell is under optimization. Preliminary results are presented in this document.

Original languageEnglish
Title of host publicationPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices VII
EditorsAlexandre Freundlich, Masakazu Sugiyama, Laurent Lombez
PublisherSPIE
ISBN (Electronic)9781510615397
DOIs
Publication statusPublished - 2018
Externally publishedYes
EventPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices VII 2018 - San Francisco, United States
Duration: 31 Jan 20181 Feb 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10527
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferencePhysics, Simulation, and Photonic Engineering of Photovoltaic Devices VII 2018
Country/TerritoryUnited States
CitySan Francisco
Period31/01/181/02/18

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