TY - JOUR
T1 - All-Solution-Processed Cu2ZnSnS4 Solar Cells with Self-Depleted Na2S Back Contact Modification Layer
AU - Gu, Youchen
AU - Shen, Heping
AU - Ye, Chen
AU - Dai, Xuezeng
AU - Cui, Qian
AU - Li, Jianbao
AU - Hao, Feng
AU - Hao, Xiaojing
AU - Lin, Hong
N1 - Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/4/5
Y1 - 2018/4/5
N2 - The thin-film photovoltaic material Cu2ZnSnS4 (CZTS) has drawn worldwide attention in recent years due to its earth-abundant, nontoxic element constitution, and remarkable photovoltaic performance. Although state-of-the-art power conversion efficiency is achieved by hydrazine-based methods, effort to fabricate such devices in a high throughput, environmental-friendly way is still highlydesired. Here a hydrazine-free all-solution-processed CZTS solar cell with Na2S self-depleted back contact modification layer for the first time is demonstrated, using a ball-milled CZTS as light absorber, low-temperature solution-processed ZnO electron-transport layer as well as silver-nanowire transparent electrode. The inserting of Na2S self-depleted layer is proven to effectively stabilize the CZTS/Mo interface by eliminating a detrimental phase segregation reaction between CZTS and Mo-coated soda lime glass, thus leading to a better crystallinity of CZTS light absorbing layer, enhanced carrier transportation at CZTS/Mo interface as well as a smaller series resistance. Furthermore, the self-depletion feature of the Na2S modification layer also averts hole-transportation barrier within the devices. The results show the vital importance of interfacial engineering for these CZST devices and the Na2S interface layer can be extended to other optoelectronic devices using Mo contact.
AB - The thin-film photovoltaic material Cu2ZnSnS4 (CZTS) has drawn worldwide attention in recent years due to its earth-abundant, nontoxic element constitution, and remarkable photovoltaic performance. Although state-of-the-art power conversion efficiency is achieved by hydrazine-based methods, effort to fabricate such devices in a high throughput, environmental-friendly way is still highlydesired. Here a hydrazine-free all-solution-processed CZTS solar cell with Na2S self-depleted back contact modification layer for the first time is demonstrated, using a ball-milled CZTS as light absorber, low-temperature solution-processed ZnO electron-transport layer as well as silver-nanowire transparent electrode. The inserting of Na2S self-depleted layer is proven to effectively stabilize the CZTS/Mo interface by eliminating a detrimental phase segregation reaction between CZTS and Mo-coated soda lime glass, thus leading to a better crystallinity of CZTS light absorbing layer, enhanced carrier transportation at CZTS/Mo interface as well as a smaller series resistance. Furthermore, the self-depletion feature of the Na2S modification layer also averts hole-transportation barrier within the devices. The results show the vital importance of interfacial engineering for these CZST devices and the Na2S interface layer can be extended to other optoelectronic devices using Mo contact.
KW - photovoltaic devices
KW - solar cells
KW - structure–property relationships
KW - surface modification
KW - thin films
UR - http://www.scopus.com/inward/record.url?scp=85040796570&partnerID=8YFLogxK
U2 - 10.1002/adfm.201703369
DO - 10.1002/adfm.201703369
M3 - Article
SN - 1616-301X
VL - 28
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 14
M1 - 1703369
ER -