Abstract
The alloy phase separation effect in InAlAs spacer layer of InAs/InAlAs nanostructure superlattices was studied by two-dimensional finite element calculation. The calculation results showed that InAs islands with wide top would prefer to induce "V"-like In-rich InAlAs arms above InAs islands in InAlAs spacer layer, while InAs islands with narrow top would promote the formation of "I"-like In-rich InAlAs arms above InAs islands in InAlAs spacer layer which corresponded well with the experimental results reported in Ref. [9].
| Original language | English |
|---|---|
| Pages (from-to) | 4632-4635 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 311 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 1 Nov 2009 |
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