Al2O3 by atmospheric pressure chemical vapour deposition

Lachlan E. Black

doi:10.1049/PBPO106E_ch7

Al₂O₃ by atmospheric pressure chemical vapour deposition

Lachlan E. Black^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

The author provides a historical review of research into the atmospheric pressure chemical vapour deposition (APCVD) of Al₂O₃ for silicon surface passivation in solar cell devices, considering deposition temperature influence on excess carrier lifetime, film thickness and interface state density. Chapter Contents: • References.

Original language	English
Title of host publication	Surface Passivation of Industrial Crystalline Silicon Solar Cells
Publisher	Institution of Engineering and Technology
Pages	81-94
Number of pages	14
ISBN (Electronic)	9781785612466
DOIs	https://doi.org/10.1049/PBPO106E_ch7
Publication status	Published - 1 Jan 2018
Externally published	Yes

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10.1049/PBPO106E_ch7

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title = "Al2O3 by atmospheric pressure chemical vapour deposition",

abstract = "The author provides a historical review of research into the atmospheric pressure chemical vapour deposition (APCVD) of Al2O3 for silicon surface passivation in solar cell devices, considering deposition temperature influence on excess carrier lifetime, film thickness and interface state density. Chapter Contents: • References.",

keywords = "APCVD, Al2O3, Alumina, And epitaxy, And trapping (semiconductors/insulators), Atmospheric pressure chemical vapour deposition, Carrier lifetime, Charge carriers: generation, Chemical vapour deposition, Deposition temperature, Electrical properties of elemental semiconductors (thin films/low-dimensional structures), Electrical properties of insulators (thin films/low-dimensional structures), Electrical properties of metal-insulator-semiconductor structures, Elemental semiconductors, Excess carrier lifetime, Film thickness, Insulating thin films, Interface state density, Interface states, Lifetime, Metal-insulator-semiconductor structures, Passivation, Photoelectric conversion, Recombination, Semiconductor-insulator boundaries, Si, Silicon, Silicon surface passivation, Solar cells, Solar cells and arrays, Structure, Surface treatment (semiconductor technology), Surface treatment and degradation in semiconductor technology, Thin film growth",

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doi = "10.1049/PBPO106E_ch7",

language = "English",

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AU - Black, Lachlan E.

N1 - Publisher Copyright: © The Institution of Engineering and Technology 2019.

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Y1 - 2018/1/1

N2 - The author provides a historical review of research into the atmospheric pressure chemical vapour deposition (APCVD) of Al2O3 for silicon surface passivation in solar cell devices, considering deposition temperature influence on excess carrier lifetime, film thickness and interface state density. Chapter Contents: • References.

AB - The author provides a historical review of research into the atmospheric pressure chemical vapour deposition (APCVD) of Al2O3 for silicon surface passivation in solar cell devices, considering deposition temperature influence on excess carrier lifetime, film thickness and interface state density. Chapter Contents: • References.

KW - APCVD

KW - Al2O3

KW - Alumina

KW - And epitaxy

KW - And trapping (semiconductors/insulators)

KW - Atmospheric pressure chemical vapour deposition

KW - Carrier lifetime

KW - Charge carriers: generation

KW - Chemical vapour deposition

KW - Deposition temperature

KW - Electrical properties of elemental semiconductors (thin films/low-dimensional structures)

KW - Electrical properties of insulators (thin films/low-dimensional structures)

KW - Electrical properties of metal-insulator-semiconductor structures

KW - Elemental semiconductors

KW - Excess carrier lifetime

KW - Film thickness

KW - Insulating thin films

KW - Interface state density

KW - Interface states

KW - Lifetime

KW - Metal-insulator-semiconductor structures

KW - Passivation

KW - Photoelectric conversion

KW - Recombination

KW - Semiconductor-insulator boundaries

KW - Si

KW - Silicon

KW - Silicon surface passivation

KW - Solar cells

KW - Solar cells and arrays

KW - Structure

KW - Surface treatment (semiconductor technology)

KW - Surface treatment and degradation in semiconductor technology

KW - Thin film growth

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U2 - 10.1049/PBPO106E_ch7

DO - 10.1049/PBPO106E_ch7

M3 - Chapter

SP - 81

EP - 94

BT - Surface Passivation of Industrial Crystalline Silicon Solar Cells

PB - Institution of Engineering and Technology

ER -

Al₂O₃ by atmospheric pressure chemical vapour deposition

Abstract

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