TY - JOUR
T1 - Amorphous group III–V semiconductors
AU - Ridgway, Mark C.
N1 - Publisher Copyright:
© Springer-Verlag Berlin Heidelberg 2015.
PY - 2015
Y1 - 2015
N2 - Structural disorder is common to the amorphous Group IV and III–V semiconductors as manifested by an increase in bondlength and Debye-Waller factor and a decrease in coordination number relative to the crystalline phase. A second component of disorder, unique to compound semiconductors, is chemical disorder in the form of homopolar bonding. In this chapter, the application of XAS to the characterisation of both structural and chemical disorder in the amorphous Group III–V semiconductors is described with an emphasis on the identification and quantification of homopolar bonding.We showchemical disorder is characteristic of these materials, comprising ∼5–15% of all bonds, and also demonstrate that XAS is an ideal technique for such studies.
AB - Structural disorder is common to the amorphous Group IV and III–V semiconductors as manifested by an increase in bondlength and Debye-Waller factor and a decrease in coordination number relative to the crystalline phase. A second component of disorder, unique to compound semiconductors, is chemical disorder in the form of homopolar bonding. In this chapter, the application of XAS to the characterisation of both structural and chemical disorder in the amorphous Group III–V semiconductors is described with an emphasis on the identification and quantification of homopolar bonding.We showchemical disorder is characteristic of these materials, comprising ∼5–15% of all bonds, and also demonstrate that XAS is an ideal technique for such studies.
UR - http://www.scopus.com/inward/record.url?scp=84921523439&partnerID=8YFLogxK
U2 - 10.1007/978-3-662-44362-0_8
DO - 10.1007/978-3-662-44362-0_8
M3 - Article
AN - SCOPUS:84921523439
SN - 0342-4111
VL - 190
SP - 165
EP - 186
JO - Springer Series in Optical Sciences
JF - Springer Series in Optical Sciences
ER -