Amorphous (In                         2                         O                         3                         )                         x                         (Ga                         2                         O                          3                         )                         y                         (ZnO)                         1-x-y                          thin films with high mobility fabricated by pulsed laser deposition

Xueqiong Su; Li Wang; Rui Sun; Chuancheng Bao; Yi Lu; R. P. Wang

doi:10.1016/j.apsusc.2013.06.036

Amorphous (In ₂ O ₃ ) _x (Ga ₂ O ₃ ) _y (ZnO) _1-x-y thin films with high mobility fabricated by pulsed laser deposition

Xueqiong Su, Li Wang^*, Rui Sun, Chuancheng Bao, Yi Lu, R. P. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We prepared a series of (In ₂ O ₃ ) _x (Ga ₂ O ₃ ) _y (ZnO) _1-x-y (0.7 ≤ x ≤ 0.8, 0.05 ≤ y ≤ 0.15) (IGZO) thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure. The structural, optical and electrical properties of the grown films were measured by various diagnosis tools. X-ray diffraction (XRD) patterns show that the mixing phase of crystalline and amorphous appears in the film with low In ₂ O ₃ contents, and a completely amorphous phase appears in (In ₂ O ₃ ) _x (Ga ₂ O ₃ ) _y (ZnO) _1-x-y (0.75 ≤ x) thin films with high In ₂ O ₃ content. The maximum carrier mobility was found to be 30 cm ² V ^-1 s ^-1 in thin film with the (In ₂ O ₃ ) _{x = 0.8} content. The transmitted spectrum shows that thin films with the (In ₂ O ₃ ) _{x = 0.8} content exhibit better light transmission and narrow band gap. These amorphous IGZO thin films with high mobility and transparency are highly desirable for device fabrication on flexible substrates.

Original language	English
Pages (from-to)	700-703
Number of pages	4
Journal	Applied Surface Science
Volume	282
DOIs	https://doi.org/10.1016/j.apsusc.2013.06.036
Publication status	Published - 1 Oct 2013

Access to Document

10.1016/j.apsusc.2013.06.036

Cite this

Su, X., Wang, L., Sun, R., Bao, C., Lu, Y., & Wang, R. P. (2013). Amorphous (In ₂ O ₃ ) _x (Ga ₂ O ₃ ) _y (ZnO) _1-x-y thin films with high mobility fabricated by pulsed laser deposition Applied Surface Science, 282, 700-703. https://doi.org/10.1016/j.apsusc.2013.06.036

Su, Xueqiong ; Wang, Li ; Sun, Rui et al. / Amorphous (In ₂ O ₃ ) _x (Ga ₂ O ₃ ) _y (ZnO) _1-x-y thin films with high mobility fabricated by pulsed laser deposition In: Applied Surface Science. 2013 ; Vol. 282. pp. 700-703.

@article{0492c38af53d4ec3b9d36fffb93f97c6,

title = " Amorphous (In 2 O 3 ) x (Ga 2 O 3 ) y (ZnO) 1-x-y thin films with high mobility fabricated by pulsed laser deposition ",

abstract = " We prepared a series of (In 2 O 3 ) x (Ga 2 O 3 ) y (ZnO) 1-x-y (0.7 ≤ x ≤ 0.8, 0.05 ≤ y ≤ 0.15) (IGZO) thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure. The structural, optical and electrical properties of the grown films were measured by various diagnosis tools. X-ray diffraction (XRD) patterns show that the mixing phase of crystalline and amorphous appears in the film with low In 2 O 3 contents, and a completely amorphous phase appears in (In 2 O 3 ) x (Ga 2 O 3 ) y (ZnO) 1-x-y (0.75 ≤ x) thin films with high In 2 O 3 content. The maximum carrier mobility was found to be 30 cm 2 V -1 s -1 in thin film with the (In 2 O 3 ) x = 0.8 content. The transmitted spectrum shows that thin films with the (In 2 O 3 ) x = 0.8 content exhibit better light transmission and narrow band gap. These amorphous IGZO thin films with high mobility and transparency are highly desirable for device fabrication on flexible substrates.",

keywords = "Amorphous, High mobility, IGZO films, Pulsed laser deposition",

author = "Xueqiong Su and Li Wang and Rui Sun and Chuancheng Bao and Yi Lu and Wang, {R. P.}",

year = "2013",

month = oct,

day = "1",

doi = "10.1016/j.apsusc.2013.06.036",

language = "English",

volume = "282",

pages = "700--703",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

Su, X, Wang, L, Sun, R, Bao, C, Lu, Y & Wang, RP 2013, ' Amorphous (In ₂ O ₃ ) _x (Ga ₂ O ₃ ) _y (ZnO) _1-x-y thin films with high mobility fabricated by pulsed laser deposition ', Applied Surface Science, vol. 282, pp. 700-703. https://doi.org/10.1016/j.apsusc.2013.06.036

Amorphous (In ₂ O ₃ ) _x (Ga ₂ O ₃ ) _y (ZnO) _1-x-y thin films with high mobility fabricated by pulsed laser deposition . / Su, Xueqiong; Wang, Li; Sun, Rui et al.
In: Applied Surface Science, Vol. 282, 01.10.2013, p. 700-703.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Amorphous (In 2 O 3 ) x (Ga 2 O 3 ) y (ZnO) 1-x-y thin films with high mobility fabricated by pulsed laser deposition

AU - Su, Xueqiong

AU - Wang, Li

AU - Sun, Rui

AU - Bao, Chuancheng

AU - Lu, Yi

AU - Wang, R. P.

PY - 2013/10/1

Y1 - 2013/10/1

N2 - We prepared a series of (In 2 O 3 ) x (Ga 2 O 3 ) y (ZnO) 1-x-y (0.7 ≤ x ≤ 0.8, 0.05 ≤ y ≤ 0.15) (IGZO) thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure. The structural, optical and electrical properties of the grown films were measured by various diagnosis tools. X-ray diffraction (XRD) patterns show that the mixing phase of crystalline and amorphous appears in the film with low In 2 O 3 contents, and a completely amorphous phase appears in (In 2 O 3 ) x (Ga 2 O 3 ) y (ZnO) 1-x-y (0.75 ≤ x) thin films with high In 2 O 3 content. The maximum carrier mobility was found to be 30 cm 2 V -1 s -1 in thin film with the (In 2 O 3 ) x = 0.8 content. The transmitted spectrum shows that thin films with the (In 2 O 3 ) x = 0.8 content exhibit better light transmission and narrow band gap. These amorphous IGZO thin films with high mobility and transparency are highly desirable for device fabrication on flexible substrates.

AB - We prepared a series of (In 2 O 3 ) x (Ga 2 O 3 ) y (ZnO) 1-x-y (0.7 ≤ x ≤ 0.8, 0.05 ≤ y ≤ 0.15) (IGZO) thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure. The structural, optical and electrical properties of the grown films were measured by various diagnosis tools. X-ray diffraction (XRD) patterns show that the mixing phase of crystalline and amorphous appears in the film with low In 2 O 3 contents, and a completely amorphous phase appears in (In 2 O 3 ) x (Ga 2 O 3 ) y (ZnO) 1-x-y (0.75 ≤ x) thin films with high In 2 O 3 content. The maximum carrier mobility was found to be 30 cm 2 V -1 s -1 in thin film with the (In 2 O 3 ) x = 0.8 content. The transmitted spectrum shows that thin films with the (In 2 O 3 ) x = 0.8 content exhibit better light transmission and narrow band gap. These amorphous IGZO thin films with high mobility and transparency are highly desirable for device fabrication on flexible substrates.

KW - Amorphous

KW - High mobility

KW - IGZO films

KW - Pulsed laser deposition

UR - http://www.scopus.com/inward/record.url?scp=84880933443&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2013.06.036

DO - 10.1016/j.apsusc.2013.06.036

M3 - Article

SN - 0169-4332

VL - 282

SP - 700

EP - 703

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Su X, Wang L, Sun R, Bao C, Lu Y, Wang RP. Amorphous (In ₂ O ₃ ) _x (Ga ₂ O ₃ ) _y (ZnO) _1-x-y thin films with high mobility fabricated by pulsed laser deposition Applied Surface Science. 2013 Oct 1;282:700-703. doi: 10.1016/j.apsusc.2013.06.036

Amorphous (In ₂ O ₃ ) _x (Ga ₂ O ₃ ) _y (ZnO) _1-x-y thin films with high mobility fabricated by pulsed laser deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this