Amorphous phase formation in ion implanted InxGa1-xAs

Z. S. Hussain; W. Wesch; E. Wendler; M. C. Ridgway

doi:10.1016/j.nimb.2007.01.058

Amorphous phase formation in ion implanted In_xGa_1-xAs

Z. S. Hussain^*, W. Wesch, E. Wendler, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The amorphisation kinetics of In_xGa_1-xAs alloys were investigated using Rutherford backscattering spectrometry in channelling configuration. Using metal organic chemical vapour deposition, epitaxial In_xGa_1-xAs layers were grown on either GaAs, InP or InAs over a wide range of stoichiometries. Ion implantation was then performed using 60 keV Ge ions at room temperature. In contrast with Al_xGa_1-xAs alloys, In_xGa_1-xAs does not exhibit amorphisation kinetics intermediate between the two binary extremes. The amorphisation behaviour was fit using the Hecking model yielding a determination of the relative probabilities of direct impact amorphisation (P_a) and stimulated amorphisation (A_s). For In_xGa_1-xAs, P_a is effectively independent of the stoichiometry whilst A_s exhibits a quadratic dependence on x with a maximum at x ≈ 0.31 (where the critical ion fluence for amorphisation is at a minimum). We attribute the rapid In_xGa_1-xAs amorphisation to the local strain induced by a bimodal bond length distribution, the latter demonstrated by previous EXAFS studies.

Original language	English
Pages (from-to)	344-347
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	257
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2007.01.058
Publication status	Published - Apr 2007

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title = "Amorphous phase formation in ion implanted InxGa1-xAs",

abstract = "The amorphisation kinetics of InxGa1-xAs alloys were investigated using Rutherford backscattering spectrometry in channelling configuration. Using metal organic chemical vapour deposition, epitaxial InxGa1-xAs layers were grown on either GaAs, InP or InAs over a wide range of stoichiometries. Ion implantation was then performed using 60 keV Ge ions at room temperature. In contrast with AlxGa1-xAs alloys, InxGa1-xAs does not exhibit amorphisation kinetics intermediate between the two binary extremes. The amorphisation behaviour was fit using the Hecking model yielding a determination of the relative probabilities of direct impact amorphisation (Pa) and stimulated amorphisation (As). For InxGa1-xAs, Pa is effectively independent of the stoichiometry whilst As exhibits a quadratic dependence on x with a maximum at x ≈ 0.31 (where the critical ion fluence for amorphisation is at a minimum). We attribute the rapid InxGa1-xAs amorphisation to the local strain induced by a bimodal bond length distribution, the latter demonstrated by previous EXAFS studies.",

keywords = "Amorphisation, EXAFS, InGaAs, Ion irradiation, RBS-C (Rutherford backscattering spectrometry-channelling), Ternary alloys",

author = "Hussain, \{Z. S.\} and W. Wesch and E. Wendler and Ridgway, \{M. C.\}",

year = "2007",

month = apr,

doi = "10.1016/j.nimb.2007.01.058",

language = "English",

volume = "257",

pages = "344--347",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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AU - Hussain, Z. S.

AU - Wesch, W.

AU - Wendler, E.

AU - Ridgway, M. C.

PY - 2007/4

Y1 - 2007/4

N2 - The amorphisation kinetics of InxGa1-xAs alloys were investigated using Rutherford backscattering spectrometry in channelling configuration. Using metal organic chemical vapour deposition, epitaxial InxGa1-xAs layers were grown on either GaAs, InP or InAs over a wide range of stoichiometries. Ion implantation was then performed using 60 keV Ge ions at room temperature. In contrast with AlxGa1-xAs alloys, InxGa1-xAs does not exhibit amorphisation kinetics intermediate between the two binary extremes. The amorphisation behaviour was fit using the Hecking model yielding a determination of the relative probabilities of direct impact amorphisation (Pa) and stimulated amorphisation (As). For InxGa1-xAs, Pa is effectively independent of the stoichiometry whilst As exhibits a quadratic dependence on x with a maximum at x ≈ 0.31 (where the critical ion fluence for amorphisation is at a minimum). We attribute the rapid InxGa1-xAs amorphisation to the local strain induced by a bimodal bond length distribution, the latter demonstrated by previous EXAFS studies.

AB - The amorphisation kinetics of InxGa1-xAs alloys were investigated using Rutherford backscattering spectrometry in channelling configuration. Using metal organic chemical vapour deposition, epitaxial InxGa1-xAs layers were grown on either GaAs, InP or InAs over a wide range of stoichiometries. Ion implantation was then performed using 60 keV Ge ions at room temperature. In contrast with AlxGa1-xAs alloys, InxGa1-xAs does not exhibit amorphisation kinetics intermediate between the two binary extremes. The amorphisation behaviour was fit using the Hecking model yielding a determination of the relative probabilities of direct impact amorphisation (Pa) and stimulated amorphisation (As). For InxGa1-xAs, Pa is effectively independent of the stoichiometry whilst As exhibits a quadratic dependence on x with a maximum at x ≈ 0.31 (where the critical ion fluence for amorphisation is at a minimum). We attribute the rapid InxGa1-xAs amorphisation to the local strain induced by a bimodal bond length distribution, the latter demonstrated by previous EXAFS studies.

KW - Amorphisation

KW - EXAFS

KW - InGaAs

KW - Ion irradiation

KW - RBS-C (Rutherford backscattering spectrometry-channelling)

KW - Ternary alloys

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U2 - 10.1016/j.nimb.2007.01.058

DO - 10.1016/j.nimb.2007.01.058

M3 - Article

SN - 0168-583X

VL - 257

SP - 344

EP - 347

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2 SPEC. ISS.

ER -

Amorphous phase formation in ion implanted In_xGa_1-xAs

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