Amorphous zone evolution in Si during elevated temperature ion bombardment

S. O. Kucheyev

doi:10.1016/S0168-583X(00)00508-5

Amorphous zone evolution in Si during elevated temperature ion bombardment

S. O. Kucheyev^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Evolution of amorphous zones (a-zones) in Si during elevated temperature ion/electron bombardment is considered. Consideration is based on a point defect diffusion model for the ion-beam-induced amorphous-crystalline (a/c) phase transformation in Si. Direct thermal annealing and an additional interfacial driving force for crystallization are taken into account. The problem of a-zone size distribution during ion bombardment is addressed and solved for a particular annealing situation. Possible experiments necessary to test this theoretical treatment are proposed. This formalism can also be applied to describe damage build-up in Si during ion bombardment.

Original language	English
Pages (from-to)	130-136
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	174
Issue number	1-2
DOIs	https://doi.org/10.1016/S0168-583X(00)00508-5
Publication status	Published - Mar 2001

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abstract = "Evolution of amorphous zones (a-zones) in Si during elevated temperature ion/electron bombardment is considered. Consideration is based on a point defect diffusion model for the ion-beam-induced amorphous-crystalline (a/c) phase transformation in Si. Direct thermal annealing and an additional interfacial driving force for crystallization are taken into account. The problem of a-zone size distribution during ion bombardment is addressed and solved for a particular annealing situation. Possible experiments necessary to test this theoretical treatment are proposed. This formalism can also be applied to describe damage build-up in Si during ion bombardment.",

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AB - Evolution of amorphous zones (a-zones) in Si during elevated temperature ion/electron bombardment is considered. Consideration is based on a point defect diffusion model for the ion-beam-induced amorphous-crystalline (a/c) phase transformation in Si. Direct thermal annealing and an additional interfacial driving force for crystallization are taken into account. The problem of a-zone size distribution during ion bombardment is addressed and solved for a particular annealing situation. Possible experiments necessary to test this theoretical treatment are proposed. This formalism can also be applied to describe damage build-up in Si during ion bombardment.

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JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

ER -

Amorphous zone evolution in Si during elevated temperature ion bombardment

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