An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking

M. J. Lederer; B. Luther-Davies; H. H. Tan; C. Jagadish

doi:10.1109/3.726608

An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking

M. J. Lederer^*, B. Luther-Davies, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We have fabricated GaAs-based antiresonant Fabry-Perot saturable absorbers (A-FPSA's) for passive mode-locking near infrared solid-state lasers using metal-organic vapor phase epitaxy (MOVPE) growth followed by ion implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing. The devices were characterized for their large-signal response including saturation fluence, modulation depth, and nonbleachable losses - important parameters for passive mode-locking. Finally, we demonstrate mode-locking using our samples within a Ti: sapphire laser observing stable and reliable self-starting, pulses in the 100-fs range, and 50-nm tunability. Results of computer simulations are in good agreement with the experiments.

Original language	English
Pages (from-to)	2150-2161
Number of pages	12
Journal	IEEE Journal of Quantum Electronics
Volume	34
Issue number	11
DOIs	https://doi.org/10.1109/3.726608
Publication status	Published - Nov 1998

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@article{d3616bad862542df8fd79da7699ab81c,

title = "An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking",

abstract = "We have fabricated GaAs-based antiresonant Fabry-Perot saturable absorbers (A-FPSA's) for passive mode-locking near infrared solid-state lasers using metal-organic vapor phase epitaxy (MOVPE) growth followed by ion implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing. The devices were characterized for their large-signal response including saturation fluence, modulation depth, and nonbleachable losses - important parameters for passive mode-locking. Finally, we demonstrate mode-locking using our samples within a Ti: sapphire laser observing stable and reliable self-starting, pulses in the 100-fs range, and 50-nm tunability. Results of computer simulations are in good agreement with the experiments.",

keywords = "Ion implantation, MOVPE growth, Mode-locked lasers, Passive mode-locking, Semiconductor saturable absorbers",

author = "Lederer, {M. J.} and B. Luther-Davies and Tan, {H. H.} and C. Jagadish",

year = "1998",

month = nov,

doi = "10.1109/3.726608",

language = "English",

volume = "34",

pages = "2150--2161",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking. / Lederer, M. J.; Luther-Davies, B.; Tan, H. H. et al.
In: IEEE Journal of Quantum Electronics, Vol. 34, No. 11, 11.1998, p. 2150-2161.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking

AU - Lederer, M. J.

AU - Luther-Davies, B.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 1998/11

Y1 - 1998/11

N2 - We have fabricated GaAs-based antiresonant Fabry-Perot saturable absorbers (A-FPSA's) for passive mode-locking near infrared solid-state lasers using metal-organic vapor phase epitaxy (MOVPE) growth followed by ion implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing. The devices were characterized for their large-signal response including saturation fluence, modulation depth, and nonbleachable losses - important parameters for passive mode-locking. Finally, we demonstrate mode-locking using our samples within a Ti: sapphire laser observing stable and reliable self-starting, pulses in the 100-fs range, and 50-nm tunability. Results of computer simulations are in good agreement with the experiments.

AB - We have fabricated GaAs-based antiresonant Fabry-Perot saturable absorbers (A-FPSA's) for passive mode-locking near infrared solid-state lasers using metal-organic vapor phase epitaxy (MOVPE) growth followed by ion implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing. The devices were characterized for their large-signal response including saturation fluence, modulation depth, and nonbleachable losses - important parameters for passive mode-locking. Finally, we demonstrate mode-locking using our samples within a Ti: sapphire laser observing stable and reliable self-starting, pulses in the 100-fs range, and 50-nm tunability. Results of computer simulations are in good agreement with the experiments.

KW - Ion implantation

KW - MOVPE growth

KW - Mode-locked lasers

KW - Passive mode-locking

KW - Semiconductor saturable absorbers

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U2 - 10.1109/3.726608

DO - 10.1109/3.726608

M3 - Article

SN - 0018-9197

VL - 34

SP - 2150

EP - 2161

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 11

ER -

An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking

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