An order of magnitude increase in the quantum efficiency of (Al)GaAs nanowires using hybrid photonic-plasmonic modes

Sudha Mokkapati; Dhruv Saxena; Nian Jiang; Li Li; Hark Hoe Tan; Chennupati Jagadish

doi:10.1021/nl503593w

An order of magnitude increase in the quantum efficiency of (Al)GaAs nanowires using hybrid photonic-plasmonic modes

Sudha Mokkapati^*, Dhruv Saxena, Nian Jiang, Li Li, Hark Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

We demonstrate 900% relative enhancement in the quantum efficiency (QE) of surface passivated GaAs nanowires by coupling them to resonant nanocavities that support hybrid photonic-plasmonic modes. This nonconventional approach to increase the QE of GaAs nanowires results in QE enhancement over the entire nanowire volume and is not limited to the near-field of the plasmonic structure. Our cavity design enables spatially and spectrally tunable resonant modes and efficient in- and out-coupling of light from the nanowires. Futhermore, this approach is not fabrication intensive; it is scalable and can be adapted to enhance the QE of a wide range of low QE semiconductor nanostructures.

Original language	English
Pages (from-to)	307-312
Number of pages	6
Journal	Nano Letters
Volume	15
Issue number	1
DOIs	https://doi.org/10.1021/nl503593w
Publication status	Published - 14 Jan 2015

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@article{01384ae50d3a483b9a9e14d9280ca344,

title = "An order of magnitude increase in the quantum efficiency of (Al)GaAs nanowires using hybrid photonic-plasmonic modes",

abstract = "We demonstrate 900\% relative enhancement in the quantum efficiency (QE) of surface passivated GaAs nanowires by coupling them to resonant nanocavities that support hybrid photonic-plasmonic modes. This nonconventional approach to increase the QE of GaAs nanowires results in QE enhancement over the entire nanowire volume and is not limited to the near-field of the plasmonic structure. Our cavity design enables spatially and spectrally tunable resonant modes and efficient in- and out-coupling of light from the nanowires. Futhermore, this approach is not fabrication intensive; it is scalable and can be adapted to enhance the QE of a wide range of low QE semiconductor nanostructures.",

keywords = "GaAs, Purcell factor, nanowire, quantum efficiency, radiative redombination rate, surface passivation",

author = "Sudha Mokkapati and Dhruv Saxena and Nian Jiang and Li Li and Tan, \{Hark Hoe\} and Chennupati Jagadish",

note = "Publisher Copyright: {\textcopyright} 2014 American Chemical Society.",

year = "2015",

month = jan,

day = "14",

doi = "10.1021/nl503593w",

language = "English",

volume = "15",

pages = "307--312",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "1",

}

TY - JOUR

T1 - An order of magnitude increase in the quantum efficiency of (Al)GaAs nanowires using hybrid photonic-plasmonic modes

AU - Mokkapati, Sudha

AU - Saxena, Dhruv

AU - Jiang, Nian

AU - Li, Li

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2015/1/14

Y1 - 2015/1/14

N2 - We demonstrate 900% relative enhancement in the quantum efficiency (QE) of surface passivated GaAs nanowires by coupling them to resonant nanocavities that support hybrid photonic-plasmonic modes. This nonconventional approach to increase the QE of GaAs nanowires results in QE enhancement over the entire nanowire volume and is not limited to the near-field of the plasmonic structure. Our cavity design enables spatially and spectrally tunable resonant modes and efficient in- and out-coupling of light from the nanowires. Futhermore, this approach is not fabrication intensive; it is scalable and can be adapted to enhance the QE of a wide range of low QE semiconductor nanostructures.

AB - We demonstrate 900% relative enhancement in the quantum efficiency (QE) of surface passivated GaAs nanowires by coupling them to resonant nanocavities that support hybrid photonic-plasmonic modes. This nonconventional approach to increase the QE of GaAs nanowires results in QE enhancement over the entire nanowire volume and is not limited to the near-field of the plasmonic structure. Our cavity design enables spatially and spectrally tunable resonant modes and efficient in- and out-coupling of light from the nanowires. Futhermore, this approach is not fabrication intensive; it is scalable and can be adapted to enhance the QE of a wide range of low QE semiconductor nanostructures.

KW - GaAs

KW - Purcell factor

KW - nanowire

KW - quantum efficiency

KW - radiative redombination rate

KW - surface passivation

UR - https://www.scopus.com/pages/publications/84920935778

U2 - 10.1021/nl503593w

DO - 10.1021/nl503593w

M3 - Article

SN - 1530-6984

VL - 15

SP - 307

EP - 312

JO - Nano Letters

JF - Nano Letters

IS - 1

ER -

An order of magnitude increase in the quantum efficiency of (Al)GaAs nanowires using hybrid photonic-plasmonic modes

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