Abstract
X-ray reflectivity studies of gallium arsenide quantum well structures have been undertaken to establish the effectiveness of the technique as a non-destructive means of investigating interdiffusion between layers in these structures. Layer thicknesses were obtained from the reflectivity data both directly and by the application of modelling techniques. In addition to the layers expected from the fabrication of the samples, the reflectivity data showed that a surface layer was present on the as-produced samples which was consistent with a native oxide. Anodic oxidation and annealing of the samples gave rise to marked changes in the reflectivity profiles consistent with interdiffusion at the interfaces. The feasibility of using anomalous dispersion to highlight the gallium distribution in the samples was demonstrated. It has been demonstrated that X-ray reflectivity can give information about the layers and the interdiffusion between layers of significant value to scientists interested in semiconductor device fabrication. Copyright (C) 1999 Elsevier Science B.V.
| Original language | English |
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| Pages (from-to) | 85-91 |
| Number of pages | 7 |
| Journal | Colloids and Surfaces A: Physicochemical and Engineering Aspects |
| Volume | 155 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 15 Sept 1999 |
| Event | Proceedings of the 1997 10th Australian Conference on Colloid and Surface Chemistry - Gold Coast, QLD, Aust Duration: 30 Sept 1997 → 3 Oct 1997 |