ANALYSIS OF RUTHERFORD SCATTERING-CHANNELLING MEASUREMENTS OF DISORDER PRODUCTION AND ANNEALING IN ION IRRADIATED SEMICONDUCTORS.

G. Carter; R. G. Elliman

doi:10.1080/01422448308226425

ANALYSIS OF RUTHERFORD SCATTERING-CHANNELLING MEASUREMENTS OF DISORDER PRODUCTION AND ANNEALING IN ION IRRADIATED SEMICONDUCTORS.

G. Carter^*
, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The study of Rutherford Backscattering (RBS)/channelling results of log (yield) as a function of log (implant fluence) can be used to distinguish probable disordering mechanisms, in order to estimate disorder densities required for amorphousness collapse and to investigate thermal annealing processes.

Original language	English
Pages (from-to)	155-161
Number of pages	7
Journal	Radiation effects letters
Volume	68
Issue number	5
DOIs	https://doi.org/10.1080/01422448308226425
Publication status	Published - 1983

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@article{ad3959a4d8784e8aad5cc2ad1a1ede8e,

title = "ANALYSIS OF RUTHERFORD SCATTERING-CHANNELLING MEASUREMENTS OF DISORDER PRODUCTION AND ANNEALING IN ION IRRADIATED SEMICONDUCTORS.",

abstract = "The study of Rutherford Backscattering (RBS)/channelling results of log (yield) as a function of log (implant fluence) can be used to distinguish probable disordering mechanisms, in order to estimate disorder densities required for amorphousness collapse and to investigate thermal annealing processes.",

author = "G. Carter and Elliman, \{R. G.\}",

year = "1983",

doi = "10.1080/01422448308226425",

language = "English",

volume = "68",

pages = "155--161",

journal = "Radiation effects letters",

issn = "0142-2448",

number = "5",

}

TY - JOUR

T1 - ANALYSIS OF RUTHERFORD SCATTERING-CHANNELLING MEASUREMENTS OF DISORDER PRODUCTION AND ANNEALING IN ION IRRADIATED SEMICONDUCTORS.

AU - Carter, G.

AU - Elliman, R. G.

PY - 1983

Y1 - 1983

N2 - The study of Rutherford Backscattering (RBS)/channelling results of log (yield) as a function of log (implant fluence) can be used to distinguish probable disordering mechanisms, in order to estimate disorder densities required for amorphousness collapse and to investigate thermal annealing processes.

AB - The study of Rutherford Backscattering (RBS)/channelling results of log (yield) as a function of log (implant fluence) can be used to distinguish probable disordering mechanisms, in order to estimate disorder densities required for amorphousness collapse and to investigate thermal annealing processes.

UR - https://www.scopus.com/pages/publications/0020498682

U2 - 10.1080/01422448308226425

DO - 10.1080/01422448308226425

M3 - Article

AN - SCOPUS:0020498682

SN - 0142-2448

VL - 68

SP - 155

EP - 161

JO - Radiation effects letters

JF - Radiation effects letters

IS - 5

ER -

ANALYSIS OF RUTHERFORD SCATTERING-CHANNELLING MEASUREMENTS OF DISORDER PRODUCTION AND ANNEALING IN ION IRRADIATED SEMICONDUCTORS.

Abstract

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