ANALYSIS OF RUTHERFORD SCATTERING-CHANNELLING MEASUREMENTS OF DISORDER PRODUCTION AND ANNEALING IN ION IRRADIATED SEMICONDUCTORS.

G. Carter; R. G. Elliman

doi:10.1080/01422448308226425

ANALYSIS OF RUTHERFORD SCATTERING-CHANNELLING MEASUREMENTS OF DISORDER PRODUCTION AND ANNEALING IN ION IRRADIATED SEMICONDUCTORS.

G. Carter^*, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The study of Rutherford Backscattering (RBS)/channelling results of log (yield) as a function of log (implant fluence) can be used to distinguish probable disordering mechanisms, in order to estimate disorder densities required for amorphousness collapse and to investigate thermal annealing processes.

Original language	English
Pages (from-to)	155-161
Number of pages	7
Journal	Radiation effects letters
Volume	68
Issue number	5
DOIs	https://doi.org/10.1080/01422448308226425
Publication status	Published - 1983

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title = "ANALYSIS OF RUTHERFORD SCATTERING-CHANNELLING MEASUREMENTS OF DISORDER PRODUCTION AND ANNEALING IN ION IRRADIATED SEMICONDUCTORS.",

abstract = "The study of Rutherford Backscattering (RBS)/channelling results of log (yield) as a function of log (implant fluence) can be used to distinguish probable disordering mechanisms, in order to estimate disorder densities required for amorphousness collapse and to investigate thermal annealing processes.",

author = "G. Carter and Elliman, \{R. G.\}",

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AU - Elliman, R. G.

PY - 1983

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AB - The study of Rutherford Backscattering (RBS)/channelling results of log (yield) as a function of log (implant fluence) can be used to distinguish probable disordering mechanisms, in order to estimate disorder densities required for amorphousness collapse and to investigate thermal annealing processes.

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U2 - 10.1080/01422448308226425

DO - 10.1080/01422448308226425

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EP - 161

JO - Radiation effects letters

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IS - 5

ER -

ANALYSIS OF RUTHERFORD SCATTERING-CHANNELLING MEASUREMENTS OF DISORDER PRODUCTION AND ANNEALING IN ION IRRADIATED SEMICONDUCTORS.

Abstract

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