Analysis of selective phosphorous laser doping in high-efficiency solar cells

This paper focuses on the analysis of local phosphorous laser doping in high-efficiency solar cells. Those so-called selective emitters are intended to reduce the contact recombination and resistance in order to increase the solar conversion efficiency. Sample solar cells are prepared using laser chemical processing as the laser doping technique and analyzed via analytical models and suns-V_oc measurements at high illumination densities. It can be shown that fully ohmic contacts can be manufactured on the investigated selective emitters which exhibit low dark saturation currents. The specific recombination current density of the local laser doping is determined experimentally to be < 8.5 × 10^-13 A/cm² for planar surfaces.