Abstract
Theoretical modelling of suns-Voc characteristics of silicon solar cells in extreme conditions of surface recombination and illumination intensity predicts departures from the standard I-V characteristic curves. These departures result in ideality factors that can be either higher or lower than unity, depending on the conditions. Analytical proof of such non-idealities is also given in the paper, showing that they are due to the finite diffusivity of carriers towards the surfaces.
Original language | English |
---|---|
Pages (from-to) | 958-960 |
Number of pages | 3 |
Journal | Solar Energy Materials and Solar Cells |
Volume | 93 |
Issue number | 6-7 |
DOIs | |
Publication status | Published - Jun 2009 |