Analytical and computer modelling of suns-Voc silicon solar cell characteristics

Andres Cuevas; Jason Tan

doi:10.1016/j.solmat.2008.11.041

Analytical and computer modelling of suns-V_oc silicon solar cell characteristics

Andres Cuevas^*, Jason Tan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Theoretical modelling of suns-V_oc characteristics of silicon solar cells in extreme conditions of surface recombination and illumination intensity predicts departures from the standard I-V characteristic curves. These departures result in ideality factors that can be either higher or lower than unity, depending on the conditions. Analytical proof of such non-idealities is also given in the paper, showing that they are due to the finite diffusivity of carriers towards the surfaces.

Original language	English
Pages (from-to)	958-960
Number of pages	3
Journal	Solar Energy Materials and Solar Cells
Volume	93
Issue number	6-7
DOIs	https://doi.org/10.1016/j.solmat.2008.11.041
Publication status	Published - Jun 2009

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10.1016/j.solmat.2008.11.041

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title = "Analytical and computer modelling of suns-Voc silicon solar cell characteristics",

abstract = "Theoretical modelling of suns-Voc characteristics of silicon solar cells in extreme conditions of surface recombination and illumination intensity predicts departures from the standard I-V characteristic curves. These departures result in ideality factors that can be either higher or lower than unity, depending on the conditions. Analytical proof of such non-idealities is also given in the paper, showing that they are due to the finite diffusivity of carriers towards the surfaces.",

keywords = "I-V characteristics, Solar cell modelling, Suns-V measurements",

author = "Andres Cuevas and Jason Tan",

year = "2009",

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doi = "10.1016/j.solmat.2008.11.041",

language = "English",

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pages = "958--960",

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issn = "0927-0248",

publisher = "Elsevier B.V.",

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T1 - Analytical and computer modelling of suns-Voc silicon solar cell characteristics

AU - Cuevas, Andres

AU - Tan, Jason

PY - 2009/6

Y1 - 2009/6

N2 - Theoretical modelling of suns-Voc characteristics of silicon solar cells in extreme conditions of surface recombination and illumination intensity predicts departures from the standard I-V characteristic curves. These departures result in ideality factors that can be either higher or lower than unity, depending on the conditions. Analytical proof of such non-idealities is also given in the paper, showing that they are due to the finite diffusivity of carriers towards the surfaces.

AB - Theoretical modelling of suns-Voc characteristics of silicon solar cells in extreme conditions of surface recombination and illumination intensity predicts departures from the standard I-V characteristic curves. These departures result in ideality factors that can be either higher or lower than unity, depending on the conditions. Analytical proof of such non-idealities is also given in the paper, showing that they are due to the finite diffusivity of carriers towards the surfaces.

KW - I-V characteristics

KW - Solar cell modelling

KW - Suns-V measurements

UR - https://www.scopus.com/pages/publications/67349223508

U2 - 10.1016/j.solmat.2008.11.041

DO - 10.1016/j.solmat.2008.11.041

M3 - Article

SN - 0927-0248

VL - 93

SP - 958

EP - 960

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 6-7

ER -

Analytical and computer modelling of suns-V_oc silicon solar cell characteristics

Abstract

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