Analyzing hysteresis behavior of capacitance-voltage characteristics of IZO/C60/pentacene/Au diodes with a hole-transport electron-blocking polyterpenol layer by electric-field-induced optical second-harmonic generation measurement

Dai Taguchi; Takaaki Manaka; Mitsumasa Iwamoto; Kateryna Bazaka; Mohan V. Jacob

doi:10.1016/j.cplett.2013.04.030

Analyzing hysteresis behavior of capacitance-voltage characteristics of IZO/C₆₀/pentacene/Au diodes with a hole-transport electron-blocking polyterpenol layer by electric-field-induced optical second-harmonic generation measurement

Dai Taguchi, Takaaki Manaka, Mitsumasa Iwamoto^*, Kateryna Bazaka, Mohan V. Jacob

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed hysteresis behavior of capacitance-voltage (C-V) characteristics of IZO/polyterpenol (PT)/C₆₀/pentacene/Au diodes, where PT layer is actively working as a hole-transport electron-blocking layer. The EFISHG measurement verified the presence of interface accumulated charges in the diodes, and showed that a space charge electric field from accumulated excess electrons (holes) that remain at the PT/C₆₀ (C ₆₀/pentacene) interface is responsible for the hysteresis loop observed in the C-V characteristics.

Original language	English
Pages (from-to)	150-153
Number of pages	4
Journal	Chemical Physics Letters
Volume	572
DOIs	https://doi.org/10.1016/j.cplett.2013.04.030
Publication status	Published - 30 May 2013
Externally published	Yes

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Taguchi, D., Manaka, T., Iwamoto, M., Bazaka, K., & Jacob, M. V. (2013). Analyzing hysteresis behavior of capacitance-voltage characteristics of IZO/C₆₀/pentacene/Au diodes with a hole-transport electron-blocking polyterpenol layer by electric-field-induced optical second-harmonic generation measurement. Chemical Physics Letters, 572, 150-153. https://doi.org/10.1016/j.cplett.2013.04.030

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title = "Analyzing hysteresis behavior of capacitance-voltage characteristics of IZO/C60/pentacene/Au diodes with a hole-transport electron-blocking polyterpenol layer by electric-field-induced optical second-harmonic generation measurement",

abstract = "By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed hysteresis behavior of capacitance-voltage (C-V) characteristics of IZO/polyterpenol (PT)/C60/pentacene/Au diodes, where PT layer is actively working as a hole-transport electron-blocking layer. The EFISHG measurement verified the presence of interface accumulated charges in the diodes, and showed that a space charge electric field from accumulated excess electrons (holes) that remain at the PT/C60 (C 60/pentacene) interface is responsible for the hysteresis loop observed in the C-V characteristics.",

author = "Dai Taguchi and Takaaki Manaka and Mitsumasa Iwamoto and Kateryna Bazaka and Jacob, {Mohan V.}",

year = "2013",

month = may,

day = "30",

doi = "10.1016/j.cplett.2013.04.030",

language = "English",

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journal = "Chemical Physics Letters",

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Taguchi, D, Manaka, T, Iwamoto, M, Bazaka, K & Jacob, MV 2013, 'Analyzing hysteresis behavior of capacitance-voltage characteristics of IZO/C₆₀/pentacene/Au diodes with a hole-transport electron-blocking polyterpenol layer by electric-field-induced optical second-harmonic generation measurement', Chemical Physics Letters, vol. 572, pp. 150-153. https://doi.org/10.1016/j.cplett.2013.04.030

Analyzing hysteresis behavior of capacitance-voltage characteristics of IZO/C₆₀/pentacene/Au diodes with a hole-transport electron-blocking polyterpenol layer by electric-field-induced optical second-harmonic generation measurement. / Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa et al.
In: Chemical Physics Letters, Vol. 572, 30.05.2013, p. 150-153.

Research output: Contribution to journal › Article › peer-review

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AB - By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed hysteresis behavior of capacitance-voltage (C-V) characteristics of IZO/polyterpenol (PT)/C60/pentacene/Au diodes, where PT layer is actively working as a hole-transport electron-blocking layer. The EFISHG measurement verified the presence of interface accumulated charges in the diodes, and showed that a space charge electric field from accumulated excess electrons (holes) that remain at the PT/C60 (C 60/pentacene) interface is responsible for the hysteresis loop observed in the C-V characteristics.

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