Abstract
By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed hysteresis behavior of capacitance-voltage (C-V) characteristics of IZO/polyterpenol (PT)/C60/pentacene/Au diodes, where PT layer is actively working as a hole-transport electron-blocking layer. The EFISHG measurement verified the presence of interface accumulated charges in the diodes, and showed that a space charge electric field from accumulated excess electrons (holes) that remain at the PT/C60 (C 60/pentacene) interface is responsible for the hysteresis loop observed in the C-V characteristics.
| Original language | English |
|---|---|
| Pages (from-to) | 150-153 |
| Number of pages | 4 |
| Journal | Chemical Physics Letters |
| Volume | 572 |
| DOIs | |
| Publication status | Published - 30 May 2013 |
| Externally published | Yes |
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