Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

Florian Vigneau; Zaiping Zeng; Walter Escoffier; Philippe Caroff; Renaud Leturcq; Yann Michel Niquet; Bertrand Raquet; Michel Goiran

doi:10.1103/PhysRevB.97.125308

Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

Florian Vigneau^*, Zaiping Zeng, Walter Escoffier, Philippe Caroff, Renaud Leturcq, Yann Michel Niquet, Bertrand Raquet, Michel Goiran

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either perpendicular or parallel to the nanowire axis lifting the spin and orbital degeneracies of the subbands. Under normal magnetic field, the conductance shows quantized steps due to the backscattering reduction and a decrease due to depopulation of the 1D modes. Under axial magnetic field, a quasioscillatory behavior is evidenced due to the coupling of the magnetic field with the angular momentum of the wave function. In addition the formation of cyclotron orbits is highlighted under high magnetic field. The experimental results are compared with theoretical calculation of the 1D band structure and related parameters.

Original language	English
Article number	125308
Journal	Physical Review B
Volume	97
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.97.125308
Publication status	Published - 27 Mar 2018

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title = "Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field",

abstract = "The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either perpendicular or parallel to the nanowire axis lifting the spin and orbital degeneracies of the subbands. Under normal magnetic field, the conductance shows quantized steps due to the backscattering reduction and a decrease due to depopulation of the 1D modes. Under axial magnetic field, a quasioscillatory behavior is evidenced due to the coupling of the magnetic field with the angular momentum of the wave function. In addition the formation of cyclotron orbits is highlighted under high magnetic field. The experimental results are compared with theoretical calculation of the 1D band structure and related parameters.",

author = "Florian Vigneau and Zaiping Zeng and Walter Escoffier and Philippe Caroff and Renaud Leturcq and Niquet, {Yann Michel} and Bertrand Raquet and Michel Goiran",

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AU - Vigneau, Florian

AU - Zeng, Zaiping

AU - Escoffier, Walter

AU - Caroff, Philippe

AU - Leturcq, Renaud

AU - Niquet, Yann Michel

AU - Raquet, Bertrand

AU - Goiran, Michel

PY - 2018/3/27

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N2 - The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either perpendicular or parallel to the nanowire axis lifting the spin and orbital degeneracies of the subbands. Under normal magnetic field, the conductance shows quantized steps due to the backscattering reduction and a decrease due to depopulation of the 1D modes. Under axial magnetic field, a quasioscillatory behavior is evidenced due to the coupling of the magnetic field with the angular momentum of the wave function. In addition the formation of cyclotron orbits is highlighted under high magnetic field. The experimental results are compared with theoretical calculation of the 1D band structure and related parameters.

AB - The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either perpendicular or parallel to the nanowire axis lifting the spin and orbital degeneracies of the subbands. Under normal magnetic field, the conductance shows quantized steps due to the backscattering reduction and a decrease due to depopulation of the 1D modes. Under axial magnetic field, a quasioscillatory behavior is evidenced due to the coupling of the magnetic field with the angular momentum of the wave function. In addition the formation of cyclotron orbits is highlighted under high magnetic field. The experimental results are compared with theoretical calculation of the 1D band structure and related parameters.

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Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

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