Annealing induced phase transformations in amorphous As2S 3 films

R. P. Wang*, S. J. Madden, C. J. Zha, A. V. Rode, B. Luther-Davies

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    56 Citations (Scopus)

    Abstract

    Amorphous arsenic sulphide (As2S3) films prepared by ultrafast pulsed laser deposition have been vacuum annealed at a range of different temperatures. Measurements of the glass transition temperature indicate that a crystallization process initiates at annealing temperatures around 170°C. In combination with Raman scattering analysis, we conclude that phase separation is intrinsic for our as-deposited films. During annealing two sorts of phase transformation are identified: one between different amorphous polymorphs, and another from the amorphous to a crystalline state. We point out a correlation between these two types of transformation and two characteristic time scales identified from measurements of the relaxation of the refractive index, and explain the Arrhenius and non-Arrhenius behaviors leading to the observed temporal characteristics.

    Original languageEnglish
    Article number063524
    JournalJournal of Applied Physics
    Volume100
    Issue number6
    DOIs
    Publication statusPublished - 2006

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