Annealing kinetics of nanoindentation-induced polycrystalline high pressure phases in crystalline silicon

S. Ruffell*, J. E. Bradby, J. S. Williams

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    24 Citations (Scopus)

    Abstract

    Transformation kinetics of nanoindented zones in silicon containing high pressure crystalline phases (Si III and Si XII) during annealing (100 °C<T<450 °C) have been studied using Raman microspectroscopy and cross-sectional transmission electron microscopy. Signature peaks associated with Si III/XII in the Raman spectra were monitored to track the annealing of these phases to polycrystalline Si I as a function of annealing time and temperature. An overall activation energy for this transformation was found to be 0.67 eV. During annealing, Si XII disappeared faster than Si III, suggesting either that Si XII first converts to Si III or that Si XII transforms to polycrystalline Si I faster than Si III.

    Original languageEnglish
    Article number131901
    JournalApplied Physics Letters
    Volume90
    Issue number13
    DOIs
    Publication statusPublished - 2007

    Fingerprint

    Dive into the research topics of 'Annealing kinetics of nanoindentation-induced polycrystalline high pressure phases in crystalline silicon'. Together they form a unique fingerprint.

    Cite this