Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures

C. J. Park; H. Y. Cho; S. Kim; Suk Ho Choi; R. G. Elliman; J. H. Han; Chungwoo Kim; H. N. Hwang; C. C. Hwang

doi:10.1063/1.2168249

Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures

C. J. Park, H. Y. Cho, S. Kim, Suk Ho Choi^*, R. G. Elliman, J. H. Han, Chungwoo Kim, H. N. Hwang, C. C. Hwang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The annealing temperature (T _A) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and T _A is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation photoemission spectroscopy. Specifically, well-defined C-V characteristics with large hysteresis were found only for annealing temperatures greater than 950°C where Ge nanocrystals are known to form. In this temperature regime, transmission electron microcopy and energy dispersive x-ray spectroscopy demonstrate the existence of regularly arranged Ge NCs of approximately 3-5 nm diameter located around 6.7 nm from the interface.

Original language	English
Article number	036101
Journal	Journal of Applied Physics
Volume	99
Issue number	3
DOIs	https://doi.org/10.1063/1.2168249
Publication status	Published - 1 Feb 2006

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title = "Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures",

abstract = "The annealing temperature (T A) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and T A is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation photoemission spectroscopy. Specifically, well-defined C-V characteristics with large hysteresis were found only for annealing temperatures greater than 950°C where Ge nanocrystals are known to form. In this temperature regime, transmission electron microcopy and energy dispersive x-ray spectroscopy demonstrate the existence of regularly arranged Ge NCs of approximately 3-5 nm diameter located around 6.7 nm from the interface.",

author = "Park, {C. J.} and Cho, {H. Y.} and S. Kim and Choi, {Suk Ho} and Elliman, {R. G.} and Han, {J. H.} and Chungwoo Kim and Hwang, {H. N.} and Hwang, {C. C.}",

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T1 - Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures

AU - Park, C. J.

AU - Cho, H. Y.

AU - Kim, S.

AU - Choi, Suk Ho

AU - Elliman, R. G.

AU - Han, J. H.

AU - Kim, Chungwoo

AU - Hwang, H. N.

AU - Hwang, C. C.

PY - 2006/2/1

Y1 - 2006/2/1

N2 - The annealing temperature (T A) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and T A is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation photoemission spectroscopy. Specifically, well-defined C-V characteristics with large hysteresis were found only for annealing temperatures greater than 950°C where Ge nanocrystals are known to form. In this temperature regime, transmission electron microcopy and energy dispersive x-ray spectroscopy demonstrate the existence of regularly arranged Ge NCs of approximately 3-5 nm diameter located around 6.7 nm from the interface.

AB - The annealing temperature (T A) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and T A is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation photoemission spectroscopy. Specifically, well-defined C-V characteristics with large hysteresis were found only for annealing temperatures greater than 950°C where Ge nanocrystals are known to form. In this temperature regime, transmission electron microcopy and energy dispersive x-ray spectroscopy demonstrate the existence of regularly arranged Ge NCs of approximately 3-5 nm diameter located around 6.7 nm from the interface.

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Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures

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