Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells

Shu Yuan; Yong Kim; H. H. Tan; C. Jagadish; P. T. Burke; L. V. Dao; M. Gal; M. C.Y. Chan; E. H. Li; J. Zou; D. Q. Cai; D. J.H. Cockayne; R. M. Cohen

doi:10.1063/1.366830

Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells

Shu Yuan^*, Yong Kim, H. H. Tan, C. Jagadish, P. T. Burke, L. V. Dao, M. Gal, M. C.Y. Chan, E. H. Li, J. Zou, D. Q. Cai, D. J.H. Cockayne, R. M. Cohen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and quantum well modeling were used to understand the effects of intermixing on the quantum well shape. Residual water in the oxide was found to increase the intermixing, though it was not the prime cause for intermixing. Injection of defects such as group III vacancies or interstitials was considered to be a driving force for the intermixing. Different current densities used in the experimental range to create anodic oxides had little effect on the intermixing.

Original language	English
Pages (from-to)	1305-1311
Number of pages	7
Journal	Journal of Applied Physics
Volume	83
Issue number	3
DOIs	https://doi.org/10.1063/1.366830
Publication status	Published - 1 Feb 1998

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abstract = "Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and quantum well modeling were used to understand the effects of intermixing on the quantum well shape. Residual water in the oxide was found to increase the intermixing, though it was not the prime cause for intermixing. Injection of defects such as group III vacancies or interstitials was considered to be a driving force for the intermixing. Different current densities used in the experimental range to create anodic oxides had little effect on the intermixing.",

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AU - Yuan, Shu

AU - Kim, Yong

AU - Tan, H. H.

AU - Jagadish, C.

AU - Burke, P. T.

AU - Dao, L. V.

AU - Gal, M.

AU - Chan, M. C.Y.

AU - Li, E. H.

AU - Zou, J.

AU - Cai, D. Q.

AU - Cockayne, D. J.H.

AU - Cohen, R. M.

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AB - Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and quantum well modeling were used to understand the effects of intermixing on the quantum well shape. Residual water in the oxide was found to increase the intermixing, though it was not the prime cause for intermixing. Injection of defects such as group III vacancies or interstitials was considered to be a driving force for the intermixing. Different current densities used in the experimental range to create anodic oxides had little effect on the intermixing.

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Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells

Abstract

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