Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures

Shu Yuan; Chennupati Jagadish; Yong Kim; Yong Chang; Hark Hoe Tan; Richard M. Cohen; Mladen Petravic; Lap Van Dao; Mike Gal; Michael C.Y. Chan; E. Herbert Li; Jeong Seok OJ.-S.; Peter S. Zory

doi:10.1109/2944.720473

Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures

Shu Yuan^*, Chennupati Jagadish, Yong Kim, Yong Chang, Hark Hoe Tan, Richard M. Cohen, Mladen Petravic, Lap Van Dao, Mike Gal, Michael C.Y. Chan, E. Herbert Li, Jeong Seok OJ.-S., Peter S. Zory

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Anodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photoluminescence (PL) energy shift due to intermixing. Anodic oxide induced intermixing has been used to enhance quantum-wire PL in the structures grown on V-groove patterned GaAs substrates. This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be driving force for the intermixing.

Original language	English
Pages (from-to)	629-634
Number of pages	6
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	4
Issue number	4
DOIs	https://doi.org/10.1109/2944.720473
Publication status	Published - 1998

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title = "Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures",

abstract = "Anodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photoluminescence (PL) energy shift due to intermixing. Anodic oxide induced intermixing has been used to enhance quantum-wire PL in the structures grown on V-groove patterned GaAs substrates. This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be driving force for the intermixing.",

keywords = "Diffusion processes, Oxidation, Quantum wells, Quantum wires, Rapid thermal processes",

author = "Shu Yuan and Chennupati Jagadish and Yong Kim and Yong Chang and Tan, {Hark Hoe} and Cohen, {Richard M.} and Mladen Petravic and {Van Dao}, Lap and Mike Gal and Chan, {Michael C.Y.} and Li, {E. Herbert} and OJ.-S., {Jeong Seok} and Zory, {Peter S.}",

year = "1998",

doi = "10.1109/2944.720473",

language = "English",

volume = "4",

pages = "629--634",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

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T1 - Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures

AU - Yuan, Shu

AU - Jagadish, Chennupati

AU - Kim, Yong

AU - Chang, Yong

AU - Tan, Hark Hoe

AU - Cohen, Richard M.

AU - Petravic, Mladen

AU - Van Dao, Lap

AU - Gal, Mike

AU - Chan, Michael C.Y.

AU - Li, E. Herbert

AU - OJ.-S., Jeong Seok

AU - Zory, Peter S.

PY - 1998

Y1 - 1998

N2 - Anodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photoluminescence (PL) energy shift due to intermixing. Anodic oxide induced intermixing has been used to enhance quantum-wire PL in the structures grown on V-groove patterned GaAs substrates. This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be driving force for the intermixing.

AB - Anodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photoluminescence (PL) energy shift due to intermixing. Anodic oxide induced intermixing has been used to enhance quantum-wire PL in the structures grown on V-groove patterned GaAs substrates. This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be driving force for the intermixing.

KW - Diffusion processes

KW - Oxidation

KW - Quantum wells

KW - Quantum wires

KW - Rapid thermal processes

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U2 - 10.1109/2944.720473

DO - 10.1109/2944.720473

M3 - Article

SN - 1077-260X

VL - 4

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EP - 634

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

IS - 4

ER -

Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures

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