Abstract
For drift field generation IS structures with a fixed positive interface charge in an insulator compound as CsCl-dyed SiOxNy layer compounds were developed in the 80’s and employed mainly on field effect solar cells. While there has been a large number of publications about the positively biased IS structure there has been very little interest in its antipolar counterpart - the negatively biased IS structure - so far. We report on a novel insulation layer compound which inhabits a high density of fixed negative charges on crystalline silicon and represent experimental data for the first time. Interpretations of the phenomena encountered are given. Furthermore we briefly consider technological aspects of producing a negatively biased IS structure. The application to silicon solar cells is discussed as well.
Keywords: field effect – 1: thin film - 2: fundamentals - 3: devices - 4
Keywords: field effect – 1: thin film - 2: fundamentals - 3: devices - 4
Original language | English |
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Title of host publication | Proceedings of the 16th European Photovoltaic Solar Energy Conference (16E-PVSEC) |
Subtitle of host publication | Proc. on CD-ROM and in print |
Number of pages | 5 |
Publication status | Published - 1 May 2000 |
Externally published | Yes |
Event | 16th European Photovoltaic Solar Energy Conference (16EPSE) - Glasgow, United Kingdom Duration: 1 May 2000 → 5 May 2000 Conference number: 16 https://doi.org/10.4324/9781315074405 (EBook) |
Conference
Conference | 16th European Photovoltaic Solar Energy Conference (16EPSE) |
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Country/Territory | United Kingdom |
City | Glasgow |
Period | 1/05/00 → 5/05/00 |
Other | May 1 2000 |
Internet address |