Antipolar Counterpart to the Positively Charged SiOxNy Layer for Improvement of Field Effect Solar Cells

Dirk Koenig*, Gunter Ebest

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

For drift field generation IS structures with a fixed positive interface charge in an insulator compound as CsCl-dyed SiOxNy layer compounds were developed in the 80’s and employed mainly on field effect solar cells. While there has been a large number of publications about the positively biased IS structure there has been very little interest in its antipolar counterpart - the negatively biased IS structure - so far. We report on a novel insulation layer compound which inhabits a high density of fixed negative charges on crystalline silicon and represent experimental data for the first time. Interpretations of the phenomena encountered are given. Furthermore we briefly consider technological aspects of producing a negatively biased IS structure. The application to silicon solar cells is discussed as well.
Keywords: field effect – 1: thin film - 2: fundamentals - 3: devices - 4
Original languageEnglish
Title of host publicationProceedings of the 16th European Photovoltaic Solar Energy Conference (16E-PVSEC)
Subtitle of host publicationProc. on CD-ROM and in print
Number of pages5
Publication statusPublished - 1 May 2000
Externally publishedYes
Event16th European Photovoltaic Solar Energy Conference (16EPSE) - Glasgow, United Kingdom
Duration: 1 May 20005 May 2000
Conference number: 16
https://doi.org/10.4324/9781315074405 (EBook)

Conference

Conference16th European Photovoltaic Solar Energy Conference (16EPSE)
Country/TerritoryUnited Kingdom
CityGlasgow
Period1/05/005/05/00
OtherMay 1 2000
Internet address

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