Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

R. G. Elliman; M. S. Saleh; T. H. Kim; D. K. Venkatachalam; K. Belay; S. Ruffell; P. Kurunczi; J. England

doi:10.1016/j.nimb.2012.11.094

Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

R. G. Elliman^*, M. S. Saleh, T. H. Kim, D. K. Venkatachalam, K. Belay, S. Ruffell, P. Kurunczi, J. England

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (~10 nm) oxide/suboxide heterostructures (e.g. HfO₂/HfO_x or Ta₂O₅/TaO_x) is difficult using conventional film deposition techniques. In this study, ionimplantation is shown to provide an alternative means of synthesizing such structures, with results reported for Ta₂O₅/TaO _x heterostructures fabricated by oxygen-implantation of Ta. The electrical properties of the fabricated heterostructures are discussed with reference to the physical structure of the samples determined from transmission electron microscopy and X-ray photoelectron spectroscopy.

Original language	English
Pages (from-to)	98-101
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	307
DOIs	https://doi.org/10.1016/j.nimb.2012.11.094
Publication status	Published - 2013

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10.1016/j.nimb.2012.11.094

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Elliman, R. G., Saleh, M. S., Kim, T. H., Venkatachalam, D. K., Belay, K., Ruffell, S., Kurunczi, P., & England, J. (2013). Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM). Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 307, 98-101. https://doi.org/10.1016/j.nimb.2012.11.094

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title = "Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)",

abstract = "Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (~10 nm) oxide/suboxide heterostructures (e.g. HfO2/HfOx or Ta2O5/TaOx) is difficult using conventional film deposition techniques. In this study, ionimplantation is shown to provide an alternative means of synthesizing such structures, with results reported for Ta2O5/TaO x heterostructures fabricated by oxygen-implantation of Ta. The electrical properties of the fabricated heterostructures are discussed with reference to the physical structure of the samples determined from transmission electron microscopy and X-ray photoelectron spectroscopy.",

keywords = "Ion-implantation, Non-volatile memory, Resistive switching, Tantalum oxide",

author = "Elliman, {R. G.} and Saleh, {M. S.} and Kim, {T. H.} and Venkatachalam, {D. K.} and K. Belay and S. Ruffell and P. Kurunczi and J. England",

year = "2013",

doi = "10.1016/j.nimb.2012.11.094",

language = "English",

volume = "307",

pages = "98--101",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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publisher = "Elsevier B.V.",

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Elliman, RG, Saleh, MS, Kim, TH, Venkatachalam, DK, Belay, K, Ruffell, S, Kurunczi, P & England, J 2013, 'Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 307, pp. 98-101. https://doi.org/10.1016/j.nimb.2012.11.094

TY - JOUR

T1 - Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

AU - Elliman, R. G.

AU - Saleh, M. S.

AU - Kim, T. H.

AU - Venkatachalam, D. K.

AU - Belay, K.

AU - Ruffell, S.

AU - Kurunczi, P.

AU - England, J.

PY - 2013

Y1 - 2013

N2 - Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (~10 nm) oxide/suboxide heterostructures (e.g. HfO2/HfOx or Ta2O5/TaOx) is difficult using conventional film deposition techniques. In this study, ionimplantation is shown to provide an alternative means of synthesizing such structures, with results reported for Ta2O5/TaO x heterostructures fabricated by oxygen-implantation of Ta. The electrical properties of the fabricated heterostructures are discussed with reference to the physical structure of the samples determined from transmission electron microscopy and X-ray photoelectron spectroscopy.

AB - Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (~10 nm) oxide/suboxide heterostructures (e.g. HfO2/HfOx or Ta2O5/TaOx) is difficult using conventional film deposition techniques. In this study, ionimplantation is shown to provide an alternative means of synthesizing such structures, with results reported for Ta2O5/TaO x heterostructures fabricated by oxygen-implantation of Ta. The electrical properties of the fabricated heterostructures are discussed with reference to the physical structure of the samples determined from transmission electron microscopy and X-ray photoelectron spectroscopy.

KW - Ion-implantation

KW - Non-volatile memory

KW - Resistive switching

KW - Tantalum oxide

UR - http://www.scopus.com/inward/record.url?scp=84885189704&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2012.11.094

DO - 10.1016/j.nimb.2012.11.094

M3 - Article

SN - 0168-583X

VL - 307

SP - 98

EP - 101

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

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