Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

R. G. Elliman; M. S. Saleh; T. H. Kim; D. K. Venkatachalam; K. Belay; S. Ruffell; P. Kurunczi; J. England

doi:10.1016/j.nimb.2012.11.094

Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

R. G. Elliman^*, M. S. Saleh, T. H. Kim, D. K. Venkatachalam, K. Belay, S. Ruffell, P. Kurunczi, J. England

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (~10 nm) oxide/suboxide heterostructures (e.g. HfO₂/HfO_x or Ta₂O₅/TaO_x) is difficult using conventional film deposition techniques. In this study, ionimplantation is shown to provide an alternative means of synthesizing such structures, with results reported for Ta₂O₅/TaO _x heterostructures fabricated by oxygen-implantation of Ta. The electrical properties of the fabricated heterostructures are discussed with reference to the physical structure of the samples determined from transmission electron microscopy and X-ray photoelectron spectroscopy.

Original language	English
Pages (from-to)	98-101
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	307
DOIs	https://doi.org/10.1016/j.nimb.2012.11.094
Publication status	Published - 2013

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10.1016/j.nimb.2012.11.094

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Elliman, R. G., Saleh, M. S., Kim, T. H., Venkatachalam, D. K., Belay, K., Ruffell, S., Kurunczi, P., & England, J. (2013). Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM). Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 307, 98-101. https://doi.org/10.1016/j.nimb.2012.11.094

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title = "Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)",

abstract = "Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (~10 nm) oxide/suboxide heterostructures (e.g. HfO2/HfOx or Ta2O5/TaOx) is difficult using conventional film deposition techniques. In this study, ionimplantation is shown to provide an alternative means of synthesizing such structures, with results reported for Ta2O5/TaO x heterostructures fabricated by oxygen-implantation of Ta. The electrical properties of the fabricated heterostructures are discussed with reference to the physical structure of the samples determined from transmission electron microscopy and X-ray photoelectron spectroscopy.",

keywords = "Ion-implantation, Non-volatile memory, Resistive switching, Tantalum oxide",

author = "Elliman, {R. G.} and Saleh, {M. S.} and Kim, {T. H.} and Venkatachalam, {D. K.} and K. Belay and S. Ruffell and P. Kurunczi and J. England",

year = "2013",

doi = "10.1016/j.nimb.2012.11.094",

language = "English",

volume = "307",

pages = "98--101",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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publisher = "Elsevier B.V.",

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Elliman, RG, Saleh, MS, Kim, TH, Venkatachalam, DK, Belay, K, Ruffell, S, Kurunczi, P & England, J 2013, 'Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 307, pp. 98-101. https://doi.org/10.1016/j.nimb.2012.11.094

TY - JOUR

T1 - Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

AU - Elliman, R. G.

AU - Saleh, M. S.

AU - Kim, T. H.

AU - Venkatachalam, D. K.

AU - Belay, K.

AU - Ruffell, S.

AU - Kurunczi, P.

AU - England, J.

PY - 2013

Y1 - 2013

N2 - Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (~10 nm) oxide/suboxide heterostructures (e.g. HfO2/HfOx or Ta2O5/TaOx) is difficult using conventional film deposition techniques. In this study, ionimplantation is shown to provide an alternative means of synthesizing such structures, with results reported for Ta2O5/TaO x heterostructures fabricated by oxygen-implantation of Ta. The electrical properties of the fabricated heterostructures are discussed with reference to the physical structure of the samples determined from transmission electron microscopy and X-ray photoelectron spectroscopy.

AB - Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (~10 nm) oxide/suboxide heterostructures (e.g. HfO2/HfOx or Ta2O5/TaOx) is difficult using conventional film deposition techniques. In this study, ionimplantation is shown to provide an alternative means of synthesizing such structures, with results reported for Ta2O5/TaO x heterostructures fabricated by oxygen-implantation of Ta. The electrical properties of the fabricated heterostructures are discussed with reference to the physical structure of the samples determined from transmission electron microscopy and X-ray photoelectron spectroscopy.

KW - Ion-implantation

KW - Non-volatile memory

KW - Resistive switching

KW - Tantalum oxide

UR - http://www.scopus.com/inward/record.url?scp=84885189704&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2012.11.094

DO - 10.1016/j.nimb.2012.11.094

M3 - Article

SN - 0168-583X

VL - 307

SP - 98

EP - 101

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

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