Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)
- R. G. Elliman*
- , M. S. Saleh
- , T. H. Kim
- , D. K. Venkatachalam
- , K. Belay
- , S. Ruffell
- , P. Kurunczi
- , J. England
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
10
Citations
(Scopus)