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Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)
R. G. Elliman*, M. S. Saleh, T. H. Kim, D. K. Venkatachalam, K. Belay, S. Ruffell, P. Kurunczi, J. England
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
8
Citations
(Scopus)