Application of Selective Implantation in Al 0.5Ga 0.5As/In 0.25Ga 0.75As/GaAs Pseudomorphic Single Quantum Wire Structures

X. Q. Liu; W. Lu; S. C. Shen; H. H. Tan; C. Jagadish; J. Zou

doi:10.1166/jnn.2001.064

Application of Selective Implantation in Al _0.5Ga _0.5As/In _0.25Ga _0.75As/GaAs Pseudomorphic Single Quantum Wire Structures

X. Q. Liu^*, W. Lu, S. C. Shen, H. H. Tan, C. Jagadish, J. Zou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A pseudomorphic Al _0.5Ga _0.5As/In _0.25Ga _0.75As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of crescent shaped QWRs at the bottom of the V-grooves was confirmed by both transmission electron microscopy and photoluminescence (PL) spectra. The temperature dependence of PL spectra demonstrated a fast decrease of the sidewall quantum well PL intensity with increasing temperature, which originates from relaxation of carriers from well to wire region. The self-aligned dual implantation technique was successfully used to selectively disable the adjacent quantum structures. Decrease of the PL intensity of QWR at 8 K was observed after selective implantation, which resulted from a decreased number of carriers relaxed from adjacent quantum structures.

Original language	English
Pages (from-to)	389-392
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	1
Issue number	4
DOIs	https://doi.org/10.1166/jnn.2001.064
Publication status	Published - 2001

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title = "Application of Selective Implantation in Al 0.5Ga 0.5As/In 0.25Ga 0.75As/GaAs Pseudomorphic Single Quantum Wire Structures",

abstract = "A pseudomorphic Al 0.5Ga 0.5As/In 0.25Ga 0.75As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of crescent shaped QWRs at the bottom of the V-grooves was confirmed by both transmission electron microscopy and photoluminescence (PL) spectra. The temperature dependence of PL spectra demonstrated a fast decrease of the sidewall quantum well PL intensity with increasing temperature, which originates from relaxation of carriers from well to wire region. The self-aligned dual implantation technique was successfully used to selectively disable the adjacent quantum structures. Decrease of the PL intensity of QWR at 8 K was observed after selective implantation, which resulted from a decreased number of carriers relaxed from adjacent quantum structures.",

keywords = "AlGaAs/InGaAs/GaAs Pseudomorphic Structure, Implantation, Photoluminescence, Single Quantum Wire",

author = "Liu, {X. Q.} and W. Lu and Shen, {S. C.} and Tan, {H. H.} and C. Jagadish and J. Zou",

year = "2001",

doi = "10.1166/jnn.2001.064",

language = "English",

volume = "1",

pages = "389--392",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

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AU - Liu, X. Q.

AU - Lu, W.

AU - Shen, S. C.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Zou, J.

PY - 2001

Y1 - 2001

N2 - A pseudomorphic Al 0.5Ga 0.5As/In 0.25Ga 0.75As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of crescent shaped QWRs at the bottom of the V-grooves was confirmed by both transmission electron microscopy and photoluminescence (PL) spectra. The temperature dependence of PL spectra demonstrated a fast decrease of the sidewall quantum well PL intensity with increasing temperature, which originates from relaxation of carriers from well to wire region. The self-aligned dual implantation technique was successfully used to selectively disable the adjacent quantum structures. Decrease of the PL intensity of QWR at 8 K was observed after selective implantation, which resulted from a decreased number of carriers relaxed from adjacent quantum structures.

AB - A pseudomorphic Al 0.5Ga 0.5As/In 0.25Ga 0.75As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of crescent shaped QWRs at the bottom of the V-grooves was confirmed by both transmission electron microscopy and photoluminescence (PL) spectra. The temperature dependence of PL spectra demonstrated a fast decrease of the sidewall quantum well PL intensity with increasing temperature, which originates from relaxation of carriers from well to wire region. The self-aligned dual implantation technique was successfully used to selectively disable the adjacent quantum structures. Decrease of the PL intensity of QWR at 8 K was observed after selective implantation, which resulted from a decreased number of carriers relaxed from adjacent quantum structures.

KW - AlGaAs/InGaAs/GaAs Pseudomorphic Structure

KW - Implantation

KW - Photoluminescence

KW - Single Quantum Wire

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U2 - 10.1166/jnn.2001.064

DO - 10.1166/jnn.2001.064

M3 - Article

SN - 1533-4880

VL - 1

SP - 389

EP - 392

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 4

ER -

Application of Selective Implantation in Al _0.5Ga _0.5As/In _0.25Ga _0.75As/GaAs Pseudomorphic Single Quantum Wire Structures

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