Asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors

Na Li; L. Fu; Ning Li; Y. C. Chan; W. Lu; S. C. Shen; H. H. Tan; C. Jagadish

doi:10.1016/S0022-0248(00)01003-4

Asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors

Na Li, L. Fu, Ning Li, Y. C. Chan, W. Lu, S. C. Shen, H. H. Tan, C. Jagadish

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The asymmetry of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) is investigated by measuring the current-voltage (I-V) and responsivity characteristics of quantum well infrared photodetectors (QWIPs). Different asymmetry behaviors were observed in MBE and MOCVD grown devices due to their different growth mechanisms. Furthermore, the role of one of the post-growth techniques, ion implantation induced quantum well intermixing, on varying the asymmetry of the MBE QWIPs was also studied.

Original language	English
Pages (from-to)	786-790
Number of pages	5
Journal	Journal of Crystal Growth
Volume	222
Issue number	4
DOIs	https://doi.org/10.1016/S0022-0248(00)01003-4
Publication status	Published - Feb 2001

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title = "Asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors",

abstract = "The asymmetry of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) is investigated by measuring the current-voltage (I-V) and responsivity characteristics of quantum well infrared photodetectors (QWIPs). Different asymmetry behaviors were observed in MBE and MOCVD grown devices due to their different growth mechanisms. Furthermore, the role of one of the post-growth techniques, ion implantation induced quantum well intermixing, on varying the asymmetry of the MBE QWIPs was also studied.",

author = "Na Li and L. Fu and Ning Li and Chan, {Y. C.} and W. Lu and Shen, {S. C.} and Tan, {H. H.} and C. Jagadish",

year = "2001",

month = feb,

doi = "10.1016/S0022-0248(00)01003-4",

language = "English",

volume = "222",

pages = "786--790",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors

AU - Li, Na

AU - Fu, L.

AU - Li, Ning

AU - Chan, Y. C.

AU - Lu, W.

AU - Shen, S. C.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2001/2

Y1 - 2001/2

N2 - The asymmetry of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) is investigated by measuring the current-voltage (I-V) and responsivity characteristics of quantum well infrared photodetectors (QWIPs). Different asymmetry behaviors were observed in MBE and MOCVD grown devices due to their different growth mechanisms. Furthermore, the role of one of the post-growth techniques, ion implantation induced quantum well intermixing, on varying the asymmetry of the MBE QWIPs was also studied.

AB - The asymmetry of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) is investigated by measuring the current-voltage (I-V) and responsivity characteristics of quantum well infrared photodetectors (QWIPs). Different asymmetry behaviors were observed in MBE and MOCVD grown devices due to their different growth mechanisms. Furthermore, the role of one of the post-growth techniques, ion implantation induced quantum well intermixing, on varying the asymmetry of the MBE QWIPs was also studied.

UR - http://www.scopus.com/inward/record.url?scp=0035251364&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(00)01003-4

DO - 10.1016/S0022-0248(00)01003-4

M3 - Article

SN - 0022-0248

VL - 222

SP - 786

EP - 790

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors

Abstract

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