Athermal annealing of Si-implanted GaAs and InP

Mulpuri V. Rao; J. Brookshire; S. Mitra; Syed B. Qadri; R. Fischer; J. Grun; N. Papanicolaou; M. Yousuf; M. C. Ridgway

doi:10.1063/1.1576896

Athermal annealing of Si-implanted GaAs and InP

Mulpuri V. Rao^*, J. Brookshire, S. Mitra, Syed B. Qadri, R. Fischer, J. Grun, N. Papanicolaou, M. Yousuf, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A study on the athermal annealing of Si-implanted GaAs and InP was presented. Each crystal was exposed at a spot of ∼2 mm diameter to a high-intensity 1.06 μm wavelength pulsed laser radiation with ∼4 J pulse energy for 35 ns in a vacuum chamber. The electrical characteristics of the annealed region were comparable to those of a halogen-lamp annealed sample.

Original language	English
Pages (from-to)	130-135
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	1
DOIs	https://doi.org/10.1063/1.1576896
Publication status	Published - 1 Jul 2003

Access to Document

10.1063/1.1576896

Cite this

@article{f35aa201d39249e181f9b9cbb052d64f,

title = "Athermal annealing of Si-implanted GaAs and InP",

abstract = "A study on the athermal annealing of Si-implanted GaAs and InP was presented. Each crystal was exposed at a spot of ∼2 mm diameter to a high-intensity 1.06 μm wavelength pulsed laser radiation with ∼4 J pulse energy for 35 ns in a vacuum chamber. The electrical characteristics of the annealed region were comparable to those of a halogen-lamp annealed sample.",

author = "Rao, {Mulpuri V.} and J. Brookshire and S. Mitra and Qadri, {Syed B.} and R. Fischer and J. Grun and N. Papanicolaou and M. Yousuf and Ridgway, {M. C.}",

year = "2003",

month = jul,

day = "1",

doi = "10.1063/1.1576896",

language = "English",

volume = "94",

pages = "130--135",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Athermal annealing of Si-implanted GaAs and InP

AU - Rao, Mulpuri V.

AU - Brookshire, J.

AU - Mitra, S.

AU - Qadri, Syed B.

AU - Fischer, R.

AU - Grun, J.

AU - Papanicolaou, N.

AU - Yousuf, M.

AU - Ridgway, M. C.

PY - 2003/7/1

Y1 - 2003/7/1

N2 - A study on the athermal annealing of Si-implanted GaAs and InP was presented. Each crystal was exposed at a spot of ∼2 mm diameter to a high-intensity 1.06 μm wavelength pulsed laser radiation with ∼4 J pulse energy for 35 ns in a vacuum chamber. The electrical characteristics of the annealed region were comparable to those of a halogen-lamp annealed sample.

AB - A study on the athermal annealing of Si-implanted GaAs and InP was presented. Each crystal was exposed at a spot of ∼2 mm diameter to a high-intensity 1.06 μm wavelength pulsed laser radiation with ∼4 J pulse energy for 35 ns in a vacuum chamber. The electrical characteristics of the annealed region were comparable to those of a halogen-lamp annealed sample.

UR - http://www.scopus.com/inward/record.url?scp=0042706774&partnerID=8YFLogxK

U2 - 10.1063/1.1576896

DO - 10.1063/1.1576896

M3 - Article

SN - 0021-8979

VL - 94

SP - 130

EP - 135

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Athermal annealing of Si-implanted GaAs and InP

Abstract

Access to Document

Other files and links

Fingerprint

Cite this