Atomic layer deposition of inverse opals for solar cell applications

Siva Krishna Karuturi, Li Jun Liu, Liap Tat Su, Wen Bin Niu, Alfred Ling Yoong Tok

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Citations (Scopus)

Abstract

Atomic layer deposition (ALD) technique shows superior application in the fabrication of TiO2 inverse opals (IO), compared with conventional infiltration methods. In the present report, TiO2 IO structures were infiltrated by ALD method in a continuous-flow and internally developed stop-flow process, respectively. The corresponding optical and optoelectrical properties of TiO2 IO structures were investigated. The prepared uniform IO structure of 288 nm was used as a photoanode for dye-sensitized solar cells. An efficiency of 2.22% was achieved, which was much higher than that of prepared by conventional solution-infiltration method. It is indicated that ALD method is an effective approach for fabricating TiO2 IO photoanode.

Original languageEnglish
Title of host publicationAdvances in Materials, Processing and Manufacturing
Pages3-7
Number of pages5
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event13th International Conference on Quality in Research, QiR 2013 - Yogyakarta, Indonesia
Duration: 25 Jun 201328 Jun 2013

Publication series

NameAdvanced Materials Research
Volume789
ISSN (Print)1022-6680

Conference

Conference13th International Conference on Quality in Research, QiR 2013
Country/TerritoryIndonesia
CityYogyakarta
Period25/06/1328/06/13

Fingerprint

Dive into the research topics of 'Atomic layer deposition of inverse opals for solar cell applications'. Together they form a unique fingerprint.

Cite this