Atomic-level characterisation of ion-induced amorphisation in compound semiconductors

Mark C Ridgway, Christopher Glover, E Bezakova, Aidan Byrne, Garry J Foran, Kin Man Yu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Original language	English
Pages (from-to)	391-395
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research: Section B
Volume	B148
DOIs	https://doi.org/10.1016/S0168-583X(98)00766-6
Publication status	Published - 1999

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title = "Atomic-level characterisation of ion-induced amorphisation in compound semiconductors",

author = "Ridgway, {Mark C} and Christopher Glover and E Bezakova and Aidan Byrne and Foran, {Garry J} and Yu, {Kin Man}",

year = "1999",

doi = "10.1016/S0168-583X(98)00766-6",

language = "English",

volume = "B148",

pages = "391--395",

journal = "Nuclear Instruments and Methods in Physics Research: Section B",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Atomic-level characterisation of ion-induced amorphisation in compound semiconductors

AU - Ridgway, Mark C

AU - Glover, Christopher

AU - Bezakova, E

AU - Byrne, Aidan

AU - Foran, Garry J

AU - Yu, Kin Man

PY - 1999

Y1 - 1999

U2 - 10.1016/S0168-583X(98)00766-6

DO - 10.1016/S0168-583X(98)00766-6

M3 - Article

VL - B148

SP - 391

EP - 395

JO - Nuclear Instruments and Methods in Physics Research: Section B

JF - Nuclear Instruments and Methods in Physics Research: Section B

ER -