Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements

M. C. Ridgway; C. J. Glover; G. J. Foran; K. M. Yu

doi:10.1016/S0168-583X(98)00588-6

Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements

M. C. Ridgway^*, C. J. Glover, G. J. Foran, K. M. Yu

^*Corresponding author for this work

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5 Citations (Scopus)

Abstract

Extended X-ray absorption fine structure (EXAFS) analysis has been used to determine the structural parameters of stoichiometric, amorphised GaAs. Relative to a crystalline sample, the nearest-neighbor bond length and Debye-Waller factor both increased for amorphous material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to ∼3.85 atoms from the crystalline value of four. Similar trends were evident for amorphised Ge excluding the coordination number which did not deviate from the crystalline value. The structural parameters of amorphised GaAs and Ge have been discussed in terms of the multi- and mono-elemental nature, respectively, of the two materials.

Original language	English
Pages (from-to)	148-154
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	147
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(98)00588-6
Publication status	Published - 1 Jan 1999

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10.1016/S0168-583X(98)00588-6

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@article{306d03c1fef64807949c2515cc08922c,

title = "Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements",

abstract = "Extended X-ray absorption fine structure (EXAFS) analysis has been used to determine the structural parameters of stoichiometric, amorphised GaAs. Relative to a crystalline sample, the nearest-neighbor bond length and Debye-Waller factor both increased for amorphous material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to ∼3.85 atoms from the crystalline value of four. Similar trends were evident for amorphised Ge excluding the coordination number which did not deviate from the crystalline value. The structural parameters of amorphised GaAs and Ge have been discussed in terms of the multi- and mono-elemental nature, respectively, of the two materials.",

keywords = "Amorphous GaAs, EXAFS, Extended X-ray absorption fine structure, GaAs, Ion implantation",

author = "Ridgway, {M. C.} and Glover, {C. J.} and Foran, {G. J.} and Yu, {K. M.}",

year = "1999",

month = jan,

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doi = "10.1016/S0168-583X(98)00588-6",

language = "English",

volume = "147",

pages = "148--154",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

}

Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements. / Ridgway, M. C.; Glover, C. J.; Foran, G. J. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 147, No. 1-4, 01.01.1999, p. 148-154.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements

AU - Ridgway, M. C.

AU - Glover, C. J.

AU - Foran, G. J.

AU - Yu, K. M.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Extended X-ray absorption fine structure (EXAFS) analysis has been used to determine the structural parameters of stoichiometric, amorphised GaAs. Relative to a crystalline sample, the nearest-neighbor bond length and Debye-Waller factor both increased for amorphous material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to ∼3.85 atoms from the crystalline value of four. Similar trends were evident for amorphised Ge excluding the coordination number which did not deviate from the crystalline value. The structural parameters of amorphised GaAs and Ge have been discussed in terms of the multi- and mono-elemental nature, respectively, of the two materials.

AB - Extended X-ray absorption fine structure (EXAFS) analysis has been used to determine the structural parameters of stoichiometric, amorphised GaAs. Relative to a crystalline sample, the nearest-neighbor bond length and Debye-Waller factor both increased for amorphous material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to ∼3.85 atoms from the crystalline value of four. Similar trends were evident for amorphised Ge excluding the coordination number which did not deviate from the crystalline value. The structural parameters of amorphised GaAs and Ge have been discussed in terms of the multi- and mono-elemental nature, respectively, of the two materials.

KW - Amorphous GaAs

KW - EXAFS

KW - Extended X-ray absorption fine structure

KW - GaAs

KW - Ion implantation

UR - http://www.scopus.com/inward/record.url?scp=0032755220&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(98)00588-6

DO - 10.1016/S0168-583X(98)00588-6

M3 - Article

SN - 0168-583X

VL - 147

SP - 148

EP - 154

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements

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