Atomic relocation of fast diffusers in impurity-free disordered p-type GaAs

V. A. Coleman, P. N.K. Deenapanray, H. H. Tan, C. Jagadish

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    We have used deep level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements to study impurity free disordering (IFD) of p-type GaAs epitaxial layers grown by metal-organic chemical vapour deposition (MOCVD). Disordering was achieved using either an SiO2 or native oxide layer of the same thickness. Samples, including an uncapped layer for reference, were annealed at 900°C for 30s under an Ar ambient. Impurity-free disordering resulted in an increase in the free hole concentration, with the effect being most pronounced when using the SiO2 capping layer. DLTS measurements revealed a corresponding increase in the concentrations of both Cu-and Zn-related deep levels in disordered epilayers. The results presented here will be discussed in terms of the atomic relocation processes that take place during the nonequilibrium injection of excess gallium vacancies into the disordered p-type epilayers.

    Original languageEnglish
    Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
    EditorsMichael Gal
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages495-498
    Number of pages4
    ISBN (Electronic)0780375718
    DOIs
    Publication statusPublished - 2002
    EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
    Duration: 11 Dec 200213 Dec 2002

    Publication series

    NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
    Volume2002-January

    Conference

    ConferenceConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
    Country/TerritoryAustralia
    CitySydney
    Period11/12/0213/12/02

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