TY - GEN
T1 - Atomic relocation of fast diffusers in impurity-free disordered p-type GaAs
AU - Coleman, V. A.
AU - Deenapanray, P. N.K.
AU - Tan, H. H.
AU - Jagadish, C.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - We have used deep level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements to study impurity free disordering (IFD) of p-type GaAs epitaxial layers grown by metal-organic chemical vapour deposition (MOCVD). Disordering was achieved using either an SiO2 or native oxide layer of the same thickness. Samples, including an uncapped layer for reference, were annealed at 900°C for 30s under an Ar ambient. Impurity-free disordering resulted in an increase in the free hole concentration, with the effect being most pronounced when using the SiO2 capping layer. DLTS measurements revealed a corresponding increase in the concentrations of both Cu-and Zn-related deep levels in disordered epilayers. The results presented here will be discussed in terms of the atomic relocation processes that take place during the nonequilibrium injection of excess gallium vacancies into the disordered p-type epilayers.
AB - We have used deep level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements to study impurity free disordering (IFD) of p-type GaAs epitaxial layers grown by metal-organic chemical vapour deposition (MOCVD). Disordering was achieved using either an SiO2 or native oxide layer of the same thickness. Samples, including an uncapped layer for reference, were annealed at 900°C for 30s under an Ar ambient. Impurity-free disordering resulted in an increase in the free hole concentration, with the effect being most pronounced when using the SiO2 capping layer. DLTS measurements revealed a corresponding increase in the concentrations of both Cu-and Zn-related deep levels in disordered epilayers. The results presented here will be discussed in terms of the atomic relocation processes that take place during the nonequilibrium injection of excess gallium vacancies into the disordered p-type epilayers.
UR - http://www.scopus.com/inward/record.url?scp=84952657707&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2002.1237298
DO - 10.1109/COMMAD.2002.1237298
M3 - Conference contribution
T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
SP - 495
EP - 498
BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
A2 - Gal, Michael
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Y2 - 11 December 2002 through 13 December 2002
ER -