@inproceedings{529daa65b09e49d6b0d90a9fd0555cc0,
title = "Atomic relocation of fast diffusers in impurity-free disordered p-type GaAs",
abstract = "We have used deep level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements to study impurity free disordering (IFD) of p-type GaAs epitaxial layers grown by metal-organic chemical vapour deposition (MOCVD). Disordering was achieved using either an SiO2 or native oxide layer of the same thickness. Samples, including an uncapped layer for reference, were annealed at 900°C for 30s under an Ar ambient. Impurity-free disordering resulted in an increase in the free hole concentration, with the effect being most pronounced when using the SiO2 capping layer. DLTS measurements revealed a corresponding increase in the concentrations of both Cu-and Zn-related deep levels in disordered epilayers. The results presented here will be discussed in terms of the atomic relocation processes that take place during the nonequilibrium injection of excess gallium vacancies into the disordered p-type epilayers.",
author = "Coleman, \{V. A.\} and Deenapanray, \{P. N.K.\} and Tan, \{H. H.\} and C. Jagadish",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 ; Conference date: 11-12-2002 Through 13-12-2002",
year = "2002",
doi = "10.1109/COMMAD.2002.1237298",
language = "English",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "495--498",
editor = "Michael Gal",
booktitle = "2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings",
address = "United States",
}