Atomic relocation processes in impurity-free disordered p-GaAs epilayers studied by deep level transient spectroscopy

P. N.K. Deenapanray; A. Martin; S. Doshi; H. H. Tan; C. Jagadish

doi:10.1063/1.1519728

Atomic relocation processes in impurity-free disordered p-GaAs epilayers studied by deep level transient spectroscopy

P. N.K. Deenapanray, A. Martin, S. Doshi, H. H. Tan, C. Jagadish

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4 Citations (Scopus)

Abstract

We have used capacitance-voltage and deep level transient spectroscopy techniques to study the relocation of impurities, such as Zn and Cu, in impurity-free disordered (IFD) p-type GaAs. A four-fold increase in the doping concentration is observed after annealing at 925°C. Two electrically active defects HA (E_V+0.39eV) and HB2 (E_V+0.54eV), which we have attributed to Cu- and As_i/As_Ga-related levels, respectively, are observed in the disordered p-GaAs layers. The injection of gallium vacancies causes segregation of Zn dopant atoms and Cu towards the surface of IFD samples. The atomic relocation process is critically assessed in terms of the application of IFD to the band gap engineering of doped GaAs-based heterostructures.

Original language	English
Pages (from-to)	3573-3575
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	19
DOIs	https://doi.org/10.1063/1.1519728
Publication status	Published - 4 Nov 2002

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abstract = "We have used capacitance-voltage and deep level transient spectroscopy techniques to study the relocation of impurities, such as Zn and Cu, in impurity-free disordered (IFD) p-type GaAs. A four-fold increase in the doping concentration is observed after annealing at 925°C. Two electrically active defects HA (EV+0.39eV) and HB2 (EV+0.54eV), which we have attributed to Cu- and Asi/AsGa-related levels, respectively, are observed in the disordered p-GaAs layers. The injection of gallium vacancies causes segregation of Zn dopant atoms and Cu towards the surface of IFD samples. The atomic relocation process is critically assessed in terms of the application of IFD to the band gap engineering of doped GaAs-based heterostructures.",

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AU - Deenapanray, P. N.K.

AU - Martin, A.

AU - Doshi, S.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2002/11/4

Y1 - 2002/11/4

N2 - We have used capacitance-voltage and deep level transient spectroscopy techniques to study the relocation of impurities, such as Zn and Cu, in impurity-free disordered (IFD) p-type GaAs. A four-fold increase in the doping concentration is observed after annealing at 925°C. Two electrically active defects HA (EV+0.39eV) and HB2 (EV+0.54eV), which we have attributed to Cu- and Asi/AsGa-related levels, respectively, are observed in the disordered p-GaAs layers. The injection of gallium vacancies causes segregation of Zn dopant atoms and Cu towards the surface of IFD samples. The atomic relocation process is critically assessed in terms of the application of IFD to the band gap engineering of doped GaAs-based heterostructures.

AB - We have used capacitance-voltage and deep level transient spectroscopy techniques to study the relocation of impurities, such as Zn and Cu, in impurity-free disordered (IFD) p-type GaAs. A four-fold increase in the doping concentration is observed after annealing at 925°C. Two electrically active defects HA (EV+0.39eV) and HB2 (EV+0.54eV), which we have attributed to Cu- and Asi/AsGa-related levels, respectively, are observed in the disordered p-GaAs layers. The injection of gallium vacancies causes segregation of Zn dopant atoms and Cu towards the surface of IFD samples. The atomic relocation process is critically assessed in terms of the application of IFD to the band gap engineering of doped GaAs-based heterostructures.

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Atomic relocation processes in impurity-free disordered p-GaAs epilayers studied by deep level transient spectroscopy

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