Attraction of semiconductor nanowires: An in situ observation

Bin Chen; Qiang Gao; Li Chang; Yanbo Wang; Zibin Chen; Xiaozhou Liao; Hark Hoe Tan; Jin Zou; Simon P. Ringer; Chennupati Jagadish

doi:10.1016/j.actamat.2013.08.020

Attraction of semiconductor nanowires: An in situ observation

Bin Chen^*, Qiang Gao, Li Chang, Yanbo Wang, Zibin Chen, Xiaozhou Liao, Hark Hoe Tan, Jin Zou, Simon P. Ringer, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In situ deformation transmission electron microscopy was used to study the attraction behavior of GaAs semiconductor nanowires (NWs). The NWs demonstrated an interesting phenomenon of either head-to-head or body-to-body attraction at distances that depend on the NW diameters. The NWs with a diameter of ∼25 nm attracted at a distance of ∼25 nm, while large-diameter NWs of ∼55 nm showed no obvious attraction. The underlying mechanism governing the attraction of the NWs is proposed and discussed with a mechanistic model. The diameter dependence on the NW attraction behavior is discussed. The finding provides an understanding of the Ampère force in nanostructured materials caused by an electron-beam-induced current while technologically it provides useful hints for designing NW-based devices according to the diameter-dependent attraction behavior of NWs.

Original language	English
Pages (from-to)	7166-7172
Number of pages	7
Journal	Acta Materialia
Volume	61
Issue number	19
DOIs	https://doi.org/10.1016/j.actamat.2013.08.020
Publication status	Published - Nov 2013

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10.1016/j.actamat.2013.08.020

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@article{02b80fafac13446da57c9c7b0013e3ed,

title = "Attraction of semiconductor nanowires: An in situ observation",

abstract = "In situ deformation transmission electron microscopy was used to study the attraction behavior of GaAs semiconductor nanowires (NWs). The NWs demonstrated an interesting phenomenon of either head-to-head or body-to-body attraction at distances that depend on the NW diameters. The NWs with a diameter of ∼25 nm attracted at a distance of ∼25 nm, while large-diameter NWs of ∼55 nm showed no obvious attraction. The underlying mechanism governing the attraction of the NWs is proposed and discussed with a mechanistic model. The diameter dependence on the NW attraction behavior is discussed. The finding provides an understanding of the Amp{\`e}re force in nanostructured materials caused by an electron-beam-induced current while technologically it provides useful hints for designing NW-based devices according to the diameter-dependent attraction behavior of NWs.",

keywords = "Amp{\`e}re force, Attraction, Diameter dependence, Electron-beam-induced current, GaAs nanowires",

author = "Bin Chen and Qiang Gao and Li Chang and Yanbo Wang and Zibin Chen and Xiaozhou Liao and Tan, {Hark Hoe} and Jin Zou and Ringer, {Simon P.} and Chennupati Jagadish",

year = "2013",

month = nov,

doi = "10.1016/j.actamat.2013.08.020",

language = "English",

volume = "61",

pages = "7166--7172",

journal = "Acta Materialia",

issn = "1359-6454",

publisher = "Acta Materialia Inc",

number = "19",

}

TY - JOUR

T1 - Attraction of semiconductor nanowires

T2 - An in situ observation

AU - Chen, Bin

AU - Gao, Qiang

AU - Chang, Li

AU - Wang, Yanbo

AU - Chen, Zibin

AU - Liao, Xiaozhou

AU - Tan, Hark Hoe

AU - Zou, Jin

AU - Ringer, Simon P.

AU - Jagadish, Chennupati

PY - 2013/11

Y1 - 2013/11

N2 - In situ deformation transmission electron microscopy was used to study the attraction behavior of GaAs semiconductor nanowires (NWs). The NWs demonstrated an interesting phenomenon of either head-to-head or body-to-body attraction at distances that depend on the NW diameters. The NWs with a diameter of ∼25 nm attracted at a distance of ∼25 nm, while large-diameter NWs of ∼55 nm showed no obvious attraction. The underlying mechanism governing the attraction of the NWs is proposed and discussed with a mechanistic model. The diameter dependence on the NW attraction behavior is discussed. The finding provides an understanding of the Ampère force in nanostructured materials caused by an electron-beam-induced current while technologically it provides useful hints for designing NW-based devices according to the diameter-dependent attraction behavior of NWs.

AB - In situ deformation transmission electron microscopy was used to study the attraction behavior of GaAs semiconductor nanowires (NWs). The NWs demonstrated an interesting phenomenon of either head-to-head or body-to-body attraction at distances that depend on the NW diameters. The NWs with a diameter of ∼25 nm attracted at a distance of ∼25 nm, while large-diameter NWs of ∼55 nm showed no obvious attraction. The underlying mechanism governing the attraction of the NWs is proposed and discussed with a mechanistic model. The diameter dependence on the NW attraction behavior is discussed. The finding provides an understanding of the Ampère force in nanostructured materials caused by an electron-beam-induced current while technologically it provides useful hints for designing NW-based devices according to the diameter-dependent attraction behavior of NWs.

KW - Ampère force

KW - Attraction

KW - Diameter dependence

KW - Electron-beam-induced current

KW - GaAs nanowires

UR - http://www.scopus.com/inward/record.url?scp=84885644912&partnerID=8YFLogxK

U2 - 10.1016/j.actamat.2013.08.020

DO - 10.1016/j.actamat.2013.08.020

M3 - Article

SN - 1359-6454

VL - 61

SP - 7166

EP - 7172

JO - Acta Materialia

JF - Acta Materialia

IS - 19

ER -

Attraction of semiconductor nanowires: An in situ observation

Abstract

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