Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

S. Paiman; Q. Gao; H. J. Joyce; H. H. Tan; C. Jagadish; Y. Kim; Y. Guo; J. Zou

doi:10.1109/COMMAD.2010.5699767

Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

S. Paiman^*, Q. Gao, H. J. Joyce, H. H. Tan, C. Jagadish, Y. Kim, Y. Guo, J. Zou

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these growth parameters, one can tune the emission wavelength of InP NWs which is attractive for applications in developing novel optoelectronic devices.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	37-38
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699767
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699767

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Paiman, S., Gao, Q., Joyce, H. J., Tan, H. H., Jagadish, C., Kim, Y., Guo, Y., & Zou, J. (2010). Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 37-38). Article 5699767 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699767

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title = "Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio",

abstract = "Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these growth parameters, one can tune the emission wavelength of InP NWs which is attractive for applications in developing novel optoelectronic devices.",

author = "S. Paiman and Q. Gao and Joyce, {H. J.} and Tan, {H. H.} and C. Jagadish and Y. Kim and Y. Guo and J. Zou",

year = "2010",

doi = "10.1109/COMMAD.2010.5699767",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "37--38",

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note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

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Paiman, S, Gao, Q, Joyce, HJ, Tan, HH , Jagadish, C, Kim, Y, Guo, Y & Zou, J 2010, Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699767, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 37-38, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699767

Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio. / Paiman, S.; Gao, Q.; Joyce, H. J. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 37-38 5699767 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Au-catalyzed InP nanowires

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

AU - Paiman, S.

AU - Gao, Q.

AU - Joyce, H. J.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Kim, Y.

AU - Guo, Y.

AU - Zou, J.

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AB - Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these growth parameters, one can tune the emission wavelength of InP NWs which is attractive for applications in developing novel optoelectronic devices.

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M3 - Conference contribution

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

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BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

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Paiman S, Gao Q, Joyce HJ, Tan HH , Jagadish C, Kim Y et al. Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 37-38. 5699767. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699767

Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

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