Back junction solar cells on N-type multicrystalline and CZ silicon wafers

A. Cuevas*, C. Samundsett, M. J. Kerr, D. H. Macdonald, H. Mäckel, P. P. Altermatt

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    19 Citations (Scopus)

    Abstract

    The high lifetimes recently measured for n-type multicrystalline and CZ silicon make innovative solar cells possible. This paper presents back junction solar cells made on n-type silicon, including a variety of simple designs based on the use of aluminum to form the pn junction, either with uniform or localized p+ regions. The feasibility of n+np+ continuous junction cast multicrystalline Si cells is demonstrated with a 15% efficiency back junction device (Jsc=33.3mAcm-2,V oc=580mV, FF=0.776, 4cm2, 180μm thickness). Voltages up to 594mV have been measured on some mc-Si devices. Using n-type CZ silicon, a 15.8% efficiency has been obtained (Jsc=33mAcm-2, V oc=600mV, FF=0.8). Localized rear Al junction devices on n-type FZ silicon have reached Voc=645mV and Jsc=27mAcm -2(no AR coating), showing the way for improved performance.

    Original languageEnglish
    Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
    EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
    Pages963-966
    Number of pages4
    Publication statusPublished - 2003
    EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
    Duration: 11 May 200318 May 2003

    Publication series

    NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
    VolumeA

    Conference

    ConferenceProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
    Country/TerritoryJapan
    CityOsaka
    Period11/05/0318/05/03

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