Back junction solar cells on N-type multicrystalline and CZ silicon wafers

A. Cuevas; C. Samundsett; M. J. Kerr; D. H. Macdonald; H. Mäckel; P. P. Altermatt

Back junction solar cells on N-type multicrystalline and CZ silicon wafers

A. Cuevas^*, C. Samundsett, M. J. Kerr, D. H. Macdonald, H. Mäckel, P. P. Altermatt

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

19 Citations (Scopus)

Abstract

The high lifetimes recently measured for n-type multicrystalline and CZ silicon make innovative solar cells possible. This paper presents back junction solar cells made on n-type silicon, including a variety of simple designs based on the use of aluminum to form the pn junction, either with uniform or localized p⁺ regions. The feasibility of n⁺np⁺ continuous junction cast multicrystalline Si cells is demonstrated with a 15% efficiency back junction device (J_sc=33.3mAcm^-2,V _oc=580mV, FF=0.776, 4cm², 180μm thickness). Voltages up to 594mV have been measured on some mc-Si devices. Using n-type CZ silicon, a 15.8% efficiency has been obtained (J_sc=33mAcm^-2, V _oc=600mV, FF=0.8). Localized rear Al junction devices on n-type FZ silicon have reached V_oc=645mV and J_sc=27mAcm ^-2(no AR coating), showing the way for improved performance.

Original language	English
Title of host publication	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Editors	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	963-966
Number of pages	4
Publication status	Published - 2003
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003

Publication series

Name	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	A

Conference

Conference	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	11/05/03 → 18/05/03

Cite this

Cuevas, A., Samundsett, C., Kerr, M. J., Macdonald, D. H., Mäckel, H., & Altermatt, P. P. (2003). Back junction solar cells on N-type multicrystalline and CZ silicon wafers. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (pp. 963-966). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. A).

Cuevas, A. ; Samundsett, C. ; Kerr, M. J. et al. / Back junction solar cells on N-type multicrystalline and CZ silicon wafers. Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. editor / K. Kurokawa ; L.L. Kazmerski ; B. McNeils ; M. Yamaguchi ; C. Wronski. 2003. pp. 963-966 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

@inproceedings{cef7a3c7e53544fb841dc517aef453cb,

title = "Back junction solar cells on N-type multicrystalline and CZ silicon wafers",

abstract = "The high lifetimes recently measured for n-type multicrystalline and CZ silicon make innovative solar cells possible. This paper presents back junction solar cells made on n-type silicon, including a variety of simple designs based on the use of aluminum to form the pn junction, either with uniform or localized p+ regions. The feasibility of n+np+ continuous junction cast multicrystalline Si cells is demonstrated with a 15\% efficiency back junction device (Jsc=33.3mAcm-2,V oc=580mV, FF=0.776, 4cm2, 180μm thickness). Voltages up to 594mV have been measured on some mc-Si devices. Using n-type CZ silicon, a 15.8\% efficiency has been obtained (Jsc=33mAcm-2, V oc=600mV, FF=0.8). Localized rear Al junction devices on n-type FZ silicon have reached Voc=645mV and Jsc=27mAcm -2(no AR coating), showing the way for improved performance.",

author = "A. Cuevas and C. Samundsett and Kerr, \{M. J.\} and Macdonald, \{D. H.\} and H. M{\"a}ckel and Altermatt, \{P. P.\}",

year = "2003",

language = "English",

isbn = "4990181603",

series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",

pages = "963--966",

editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",

booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

}

Cuevas, A, Samundsett, C, Kerr, MJ, Macdonald, DH, Mäckel, H & Altermatt, PP 2003, Back junction solar cells on N-type multicrystalline and CZ silicon wafers. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, vol. A, pp. 963-966, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11/05/03.

Back junction solar cells on N-type multicrystalline and CZ silicon wafers. / Cuevas, A.; Samundsett, C.; Kerr, M. J. et al.
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 963-966 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. A).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

TY - GEN

T1 - Back junction solar cells on N-type multicrystalline and CZ silicon wafers

AU - Cuevas, A.

AU - Samundsett, C.

AU - Kerr, M. J.

AU - Macdonald, D. H.

AU - Mäckel, H.

AU - Altermatt, P. P.

PY - 2003

Y1 - 2003

N2 - The high lifetimes recently measured for n-type multicrystalline and CZ silicon make innovative solar cells possible. This paper presents back junction solar cells made on n-type silicon, including a variety of simple designs based on the use of aluminum to form the pn junction, either with uniform or localized p+ regions. The feasibility of n+np+ continuous junction cast multicrystalline Si cells is demonstrated with a 15% efficiency back junction device (Jsc=33.3mAcm-2,V oc=580mV, FF=0.776, 4cm2, 180μm thickness). Voltages up to 594mV have been measured on some mc-Si devices. Using n-type CZ silicon, a 15.8% efficiency has been obtained (Jsc=33mAcm-2, V oc=600mV, FF=0.8). Localized rear Al junction devices on n-type FZ silicon have reached Voc=645mV and Jsc=27mAcm -2(no AR coating), showing the way for improved performance.

AB - The high lifetimes recently measured for n-type multicrystalline and CZ silicon make innovative solar cells possible. This paper presents back junction solar cells made on n-type silicon, including a variety of simple designs based on the use of aluminum to form the pn junction, either with uniform or localized p+ regions. The feasibility of n+np+ continuous junction cast multicrystalline Si cells is demonstrated with a 15% efficiency back junction device (Jsc=33.3mAcm-2,V oc=580mV, FF=0.776, 4cm2, 180μm thickness). Voltages up to 594mV have been measured on some mc-Si devices. Using n-type CZ silicon, a 15.8% efficiency has been obtained (Jsc=33mAcm-2, V oc=600mV, FF=0.8). Localized rear Al junction devices on n-type FZ silicon have reached Voc=645mV and Jsc=27mAcm -2(no AR coating), showing the way for improved performance.

UR - https://www.scopus.com/pages/publications/6344223267

M3 - Conference Paper

SN - 4990181603

SN - 9784990181604

T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

SP - 963

EP - 966

BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

A2 - Kurokawa, K.

A2 - Kazmerski, L.L.

A2 - McNeils, B.

A2 - Yamaguchi, M.

A2 - Wronski, C.

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -

Cuevas A, Samundsett C, Kerr MJ, Macdonald DH, Mäckel H, Altermatt PP. Back junction solar cells on N-type multicrystalline and CZ silicon wafers. In Kurokawa K, Kazmerski LL, McNeils B, Yamaguchi M, Wronski C, editors, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. 2003. p. 963-966. (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

Back junction solar cells on N-type multicrystalline and CZ silicon wafers

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