Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

P. Capiod; T. Xu; J. P. Nys; M. Berthe; G. Patriarche; L. Lymperakis; J. Neugebauer; P. Caroff; R. E. Dunin-Borkowski; Ph Ebert; B. Grandidier

doi:10.1063/1.4821293

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

P. Capiod, T. Xu, J. P. Nys, M. Berthe, G. Patriarche, L. Lymperakis, J. Neugebauer, P. Caroff, R. E. Dunin-Borkowski, Ph Ebert, B. Grandidier

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28 Citations (Scopus)

Abstract

The band structure and the Fermi level pinning at clean and well-ordered sidewall surfaces of zincblende (ZB)-wurtzite (WZ) GaAs nanowires are investigated by scanning tunneling spectroscopy and density functional theory calculations. The WZ-ZB phase transition in GaAs nanowires introduces p-i junctions at the sidewall surfaces. This is caused by the presence of numerous steps, which induce a Fermi level pinning at different energies on the non-polar WZ and ZB sidewall facets.

Original language	English
Article number	122104
Journal	Applied Physics Letters
Volume	103
Issue number	12
DOIs	https://doi.org/10.1063/1.4821293
Publication status	Published - 16 Sept 2013

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abstract = "The band structure and the Fermi level pinning at clean and well-ordered sidewall surfaces of zincblende (ZB)-wurtzite (WZ) GaAs nanowires are investigated by scanning tunneling spectroscopy and density functional theory calculations. The WZ-ZB phase transition in GaAs nanowires introduces p-i junctions at the sidewall surfaces. This is caused by the presence of numerous steps, which induce a Fermi level pinning at different energies on the non-polar WZ and ZB sidewall facets.",

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AU - Capiod, P.

AU - Xu, T.

AU - Nys, J. P.

AU - Berthe, M.

AU - Patriarche, G.

AU - Lymperakis, L.

AU - Neugebauer, J.

AU - Caroff, P.

AU - Dunin-Borkowski, R. E.

AU - Ebert, Ph

AU - Grandidier, B.

PY - 2013/9/16

Y1 - 2013/9/16

N2 - The band structure and the Fermi level pinning at clean and well-ordered sidewall surfaces of zincblende (ZB)-wurtzite (WZ) GaAs nanowires are investigated by scanning tunneling spectroscopy and density functional theory calculations. The WZ-ZB phase transition in GaAs nanowires introduces p-i junctions at the sidewall surfaces. This is caused by the presence of numerous steps, which induce a Fermi level pinning at different energies on the non-polar WZ and ZB sidewall facets.

AB - The band structure and the Fermi level pinning at clean and well-ordered sidewall surfaces of zincblende (ZB)-wurtzite (WZ) GaAs nanowires are investigated by scanning tunneling spectroscopy and density functional theory calculations. The WZ-ZB phase transition in GaAs nanowires introduces p-i junctions at the sidewall surfaces. This is caused by the presence of numerous steps, which induce a Fermi level pinning at different energies on the non-polar WZ and ZB sidewall facets.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

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ER -

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

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