Band offsets at ZnO/SiC heterojunction: Heterointerface in band alignment

Almamun Ashrafi

doi:10.1016/j.susc.2010.08.002

Band offsets at ZnO/SiC heterojunction: Heterointerface in band alignment

Almamun Ashrafi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

31 Citations (SciVal)

Abstract

Pulsed laser deposited ZnO layers on 6H-SiC substrates showed the six-fold symmetry, indicating a two-dimensional epitaxial growth mode. X-ray photoelectron spectroscopy was employed to study the valence band discontinuity and interface formation in the ZnO/6H-SiC heterojunction. The valence band offset was measured to be 1.38 ± 0.28 eV, leading to a conduction band offset value of 1.01 ± 0.28 eV. The resulting band lineup in epitaxial ZnO/6H-SiC heterojunction is determined to be of staggered-type alignment. Crown

Original language	English
Pages (from-to)	L63-L66
Journal	Surface Science
Volume	604
Issue number	21-22
DOIs	https://doi.org/10.1016/j.susc.2010.08.002
Publication status	Published - Oct 2010

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title = "Band offsets at ZnO/SiC heterojunction: Heterointerface in band alignment",

abstract = "Pulsed laser deposited ZnO layers on 6H-SiC substrates showed the six-fold symmetry, indicating a two-dimensional epitaxial growth mode. X-ray photoelectron spectroscopy was employed to study the valence band discontinuity and interface formation in the ZnO/6H-SiC heterojunction. The valence band offset was measured to be 1.38 ± 0.28 eV, leading to a conduction band offset value of 1.01 ± 0.28 eV. The resulting band lineup in epitaxial ZnO/6H-SiC heterojunction is determined to be of staggered-type alignment. Crown",

keywords = "Band alignment, Band offsets, Epitaxial relationship, ZnO heteroepitaxy",

author = "Almamun Ashrafi",

year = "2010",

month = oct,

doi = "10.1016/j.susc.2010.08.002",

language = "English",

volume = "604",

pages = "L63--L66",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Band offsets at ZnO/SiC heterojunction

T2 - Heterointerface in band alignment

AU - Ashrafi, Almamun

PY - 2010/10

Y1 - 2010/10

N2 - Pulsed laser deposited ZnO layers on 6H-SiC substrates showed the six-fold symmetry, indicating a two-dimensional epitaxial growth mode. X-ray photoelectron spectroscopy was employed to study the valence band discontinuity and interface formation in the ZnO/6H-SiC heterojunction. The valence band offset was measured to be 1.38 ± 0.28 eV, leading to a conduction band offset value of 1.01 ± 0.28 eV. The resulting band lineup in epitaxial ZnO/6H-SiC heterojunction is determined to be of staggered-type alignment. Crown

AB - Pulsed laser deposited ZnO layers on 6H-SiC substrates showed the six-fold symmetry, indicating a two-dimensional epitaxial growth mode. X-ray photoelectron spectroscopy was employed to study the valence band discontinuity and interface formation in the ZnO/6H-SiC heterojunction. The valence band offset was measured to be 1.38 ± 0.28 eV, leading to a conduction band offset value of 1.01 ± 0.28 eV. The resulting band lineup in epitaxial ZnO/6H-SiC heterojunction is determined to be of staggered-type alignment. Crown

KW - Band alignment

KW - Band offsets

KW - Epitaxial relationship

KW - ZnO heteroepitaxy

UR - http://www.scopus.com/inward/record.url?scp=77957168974&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2010.08.002

DO - 10.1016/j.susc.2010.08.002

M3 - Article

SN - 0039-6028

VL - 604

SP - L63-L66

JO - Surface Science

JF - Surface Science

IS - 21-22

ER -

Band offsets at ZnO/SiC heterojunction: Heterointerface in band alignment

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