Bandgap Energy of Wurtzite InAs Nanowires

Michele B. Rota; Amira S. Ameruddin; H. Aruni Fonseka; Qiang Gao; Francesco Mura; Antonio Polimeni; Antonio Miriametro; H. Hoe Tan; Chennupati Jagadish; Mario Capizzi

doi:10.1021/acs.nanolett.6b02205

Bandgap Energy of Wurtzite InAs Nanowires

Michele B. Rota, Amira S. Ameruddin, H. Aruni Fonseka, Qiang Gao, Francesco Mura, Antonio Polimeni, Antonio Miriametro, H. Hoe Tan, Chennupati Jagadish, Mario Capizzi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

InAs nanowires (NWs) have been grown on semi-insulating InAs (111)B substrates by metal-organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The pure wurtzite (WZ) phase of these NWs has been attested by high-resolution transmission electron microscopy and selected area diffraction pattern measurements. Low temperature photoluminescence measurements have provided unambiguous and robust evidence of a well resolved, isolated peak at 0.477 eV, namely 59 meV higher than the band gap of ZB InAs. The WZ nature of this energy band has been demonstrated by high values of the polarization degree, measured in ensembles of NWs both as-grown and mechanically transferred onto Si and GaAs substrates, in agreement with the polarization selection rules for WZ crystals. The value of 0.477 eV found here for the bandgap energy of WZ InAs agrees well with theoretical calculations.

Original language	English
Pages (from-to)	5197-5203
Number of pages	7
Journal	Nano Letters
Volume	16
Issue number	8
DOIs	https://doi.org/10.1021/acs.nanolett.6b02205
Publication status	Published - 10 Aug 2016

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@article{b1c1e5fc7ce244f3bc18058e78034711,

title = "Bandgap Energy of Wurtzite InAs Nanowires",

abstract = "InAs nanowires (NWs) have been grown on semi-insulating InAs (111)B substrates by metal-organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The pure wurtzite (WZ) phase of these NWs has been attested by high-resolution transmission electron microscopy and selected area diffraction pattern measurements. Low temperature photoluminescence measurements have provided unambiguous and robust evidence of a well resolved, isolated peak at 0.477 eV, namely 59 meV higher than the band gap of ZB InAs. The WZ nature of this energy band has been demonstrated by high values of the polarization degree, measured in ensembles of NWs both as-grown and mechanically transferred onto Si and GaAs substrates, in agreement with the polarization selection rules for WZ crystals. The value of 0.477 eV found here for the bandgap energy of WZ InAs agrees well with theoretical calculations.",

keywords = "Wurtzite InAs nanowires, bandgap energy, polarization degree, steady-state photoluminescence",

author = "Rota, {Michele B.} and Ameruddin, {Amira S.} and Fonseka, {H. Aruni} and Qiang Gao and Francesco Mura and Antonio Polimeni and Antonio Miriametro and Tan, {H. Hoe} and Chennupati Jagadish and Mario Capizzi",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = aug,

day = "10",

doi = "10.1021/acs.nanolett.6b02205",

language = "English",

volume = "16",

pages = "5197--5203",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "8",

}

TY - JOUR

T1 - Bandgap Energy of Wurtzite InAs Nanowires

AU - Rota, Michele B.

AU - Ameruddin, Amira S.

AU - Fonseka, H. Aruni

AU - Gao, Qiang

AU - Mura, Francesco

AU - Polimeni, Antonio

AU - Miriametro, Antonio

AU - Tan, H. Hoe

AU - Jagadish, Chennupati

AU - Capizzi, Mario

PY - 2016/8/10

Y1 - 2016/8/10

N2 - InAs nanowires (NWs) have been grown on semi-insulating InAs (111)B substrates by metal-organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The pure wurtzite (WZ) phase of these NWs has been attested by high-resolution transmission electron microscopy and selected area diffraction pattern measurements. Low temperature photoluminescence measurements have provided unambiguous and robust evidence of a well resolved, isolated peak at 0.477 eV, namely 59 meV higher than the band gap of ZB InAs. The WZ nature of this energy band has been demonstrated by high values of the polarization degree, measured in ensembles of NWs both as-grown and mechanically transferred onto Si and GaAs substrates, in agreement with the polarization selection rules for WZ crystals. The value of 0.477 eV found here for the bandgap energy of WZ InAs agrees well with theoretical calculations.

AB - InAs nanowires (NWs) have been grown on semi-insulating InAs (111)B substrates by metal-organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The pure wurtzite (WZ) phase of these NWs has been attested by high-resolution transmission electron microscopy and selected area diffraction pattern measurements. Low temperature photoluminescence measurements have provided unambiguous and robust evidence of a well resolved, isolated peak at 0.477 eV, namely 59 meV higher than the band gap of ZB InAs. The WZ nature of this energy band has been demonstrated by high values of the polarization degree, measured in ensembles of NWs both as-grown and mechanically transferred onto Si and GaAs substrates, in agreement with the polarization selection rules for WZ crystals. The value of 0.477 eV found here for the bandgap energy of WZ InAs agrees well with theoretical calculations.

KW - Wurtzite InAs nanowires

KW - bandgap energy

KW - polarization degree

KW - steady-state photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=84981485511&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.6b02205

DO - 10.1021/acs.nanolett.6b02205

M3 - Article

SN - 1530-6984

VL - 16

SP - 5197

EP - 5203

JO - Nano Letters

JF - Nano Letters

IS - 8

ER -

Bandgap Energy of Wurtzite InAs Nanowires

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