Behaviour of natural and implanted iron during annealing of multicrystalline silicon wafers

Daniel Macdonald, Thomas Roth, L. J. Geerligs, Andres Cuevas

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Citations (Scopus)

    Abstract

    Changes in the concentration of interstitial iron in multicrystalline silicon wafers after high temperature annealing (900ºC) have been monitored by carrier lifetime measurements. Two cooling rates were investigated. The first was considered ‘fast’, meaning the interstitial Fe had no time to diffuse to precipitation sites, and should therefore be frozen-in, despite being far above the solubility limit at lower temperatures. A second ‘slow’ cool down to 650ºC allowed ample time for the Fe to reach the surfaces or other internal precipitation sites. Surprisingly, in both cases the Fe remained in a supersaturated state. This indicates the precipitation process is not diffusion-limited, and that another energetic barrier to precipitate formation must be present. Since the slow cooling used here is similar to the cooling rate experienced by multicrystalline ingots after crystallisation, this precipitate-impeding mechanism is probably responsible for the surprisingly high interstitial Fe concentrations often found in as-grown multicrystalline silicon wafers.

    Original languageEnglish
    Title of host publicationGettering and Defect Engineering in Semiconductor Technology XI - GADEST 2005
    EditorsB. Pichaud, A. Claverie, D. Alquier, H. Richter, M. Kittler, H. Richter, M. Kittler
    PublisherTrans Tech Publications Ltd.
    Pages519-524
    Number of pages6
    ISBN (Print)9783908451136
    DOIs
    Publication statusPublished - 2005
    Event11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005 - Giens, Marseilles, France
    Duration: 25 Sept 200530 Sept 2005

    Publication series

    NameSolid State Phenomena
    Volume108-109
    ISSN (Print)1012-0394
    ISSN (Electronic)1662-9779

    Conference

    Conference11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005
    Country/TerritoryFrance
    CityGiens, Marseilles
    Period25/09/0530/09/05

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