Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields

J. L. Nie; W. Xu; L. B. Lin

doi:10.1142/S021797920301834X

Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields

J. L. Nie, W. Xu^*, L. B. Lin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We present a detailed theoretical study of the influence of linearly polarized intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for ground (1s) and first excited (2s) states, E_1s and E_2s, on the intensity and the frequency of the THz radiation has been examined for a GaAs-based system. It is found that E_1s, E_2s and E_2s-E_1s decrease with increasing radiation intensity or with decreasing radiation frequency, which implies that an intense THz field can enhance ionization of dopants in semiconductors. Our analytical and numerical results show that one of the most important results obtained by A. L. A. Fonseca et al. [Phys. Stat. Sol. (b) 186, K57 (1994)] is incorrect.

Original language	English
Pages (from-to)	2487-2496
Number of pages	10
Journal	International Journal of Modern Physics B
Volume	17
Issue number	12
DOIs	https://doi.org/10.1142/S021797920301834X
Publication status	Published - 10 May 2003

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title = "Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields",

abstract = "We present a detailed theoretical study of the influence of linearly polarized intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for ground (1s) and first excited (2s) states, E1s and E2s, on the intensity and the frequency of the THz radiation has been examined for a GaAs-based system. It is found that E1s, E2s and E2s-E1s decrease with increasing radiation intensity or with decreasing radiation frequency, which implies that an intense THz field can enhance ionization of dopants in semiconductors. Our analytical and numerical results show that one of the most important results obtained by A. L. A. Fonseca et al. [Phys. Stat. Sol. (b) 186, K57 (1994)] is incorrect.",

keywords = "Intense laser radiation, Semiconductor, Terahertz laser",

author = "Nie, {J. L.} and W. Xu and Lin, {L. B.}",

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language = "English",

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journal = "International Journal of Modern Physics B",

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T1 - Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields

AU - Nie, J. L.

AU - Xu, W.

AU - Lin, L. B.

PY - 2003/5/10

Y1 - 2003/5/10

N2 - We present a detailed theoretical study of the influence of linearly polarized intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for ground (1s) and first excited (2s) states, E1s and E2s, on the intensity and the frequency of the THz radiation has been examined for a GaAs-based system. It is found that E1s, E2s and E2s-E1s decrease with increasing radiation intensity or with decreasing radiation frequency, which implies that an intense THz field can enhance ionization of dopants in semiconductors. Our analytical and numerical results show that one of the most important results obtained by A. L. A. Fonseca et al. [Phys. Stat. Sol. (b) 186, K57 (1994)] is incorrect.

AB - We present a detailed theoretical study of the influence of linearly polarized intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for ground (1s) and first excited (2s) states, E1s and E2s, on the intensity and the frequency of the THz radiation has been examined for a GaAs-based system. It is found that E1s, E2s and E2s-E1s decrease with increasing radiation intensity or with decreasing radiation frequency, which implies that an intense THz field can enhance ionization of dopants in semiconductors. Our analytical and numerical results show that one of the most important results obtained by A. L. A. Fonseca et al. [Phys. Stat. Sol. (b) 186, K57 (1994)] is incorrect.

KW - Intense laser radiation

KW - Semiconductor

KW - Terahertz laser

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U2 - 10.1142/S021797920301834X

DO - 10.1142/S021797920301834X

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SP - 2487

EP - 2496

JO - International Journal of Modern Physics B

JF - International Journal of Modern Physics B

IS - 12

ER -

Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields

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