Bistable resistive switching in hafnium-silicate thin films

M. N. Saleh; D. K. Venkatachalam; K. Belay; T. Kim; R. G. Elliman

doi:10.1109/COMMAD.2010.5699730

Bistable resistive switching in hafnium-silicate thin films

M. N. Saleh, D. K. Venkatachalam, K. Belay, T. Kim, R. G. Elliman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (Hf_xSi_1-xO₂) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on the size of the top electrode (TE). Both high-conducting state (ON) and low-conducting state (OFF) are non-polar and stable. The ratio of resistance of the ON and the OFF state is greater than 10³. Both states, performed by dc voltage sweeping and applying short pulses, are stable over 10⁴s at a read out voltage of 0.2V at 85°C, which are all essential properties for further resistive random access memory (RRAM) applications.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	185-186
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699730
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699730

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Saleh, M. N., Venkatachalam, D. K., Belay, K., Kim, T., & Elliman, R. G. (2010). Bistable resistive switching in hafnium-silicate thin films. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 185-186). Article 5699730 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699730

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title = "Bistable resistive switching in hafnium-silicate thin films",

abstract = "We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (HfxSi1-xO2) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on the size of the top electrode (TE). Both high-conducting state (ON) and low-conducting state (OFF) are non-polar and stable. The ratio of resistance of the ON and the OFF state is greater than 103. Both states, performed by dc voltage sweeping and applying short pulses, are stable over 104s at a read out voltage of 0.2V at 85°C, which are all essential properties for further resistive random access memory (RRAM) applications.",

author = "Saleh, {M. N.} and Venkatachalam, {D. K.} and K. Belay and T. Kim and Elliman, {R. G.}",

year = "2010",

doi = "10.1109/COMMAD.2010.5699730",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "185--186",

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note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

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Saleh, MN, Venkatachalam, DK, Belay, K, Kim, T & Elliman, RG 2010, Bistable resistive switching in hafnium-silicate thin films. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699730, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 185-186, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699730

Bistable resistive switching in hafnium-silicate thin films. / Saleh, M. N.; Venkatachalam, D. K.; Belay, K. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 185-186 5699730 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (HfxSi1-xO2) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on the size of the top electrode (TE). Both high-conducting state (ON) and low-conducting state (OFF) are non-polar and stable. The ratio of resistance of the ON and the OFF state is greater than 103. Both states, performed by dc voltage sweeping and applying short pulses, are stable over 104s at a read out voltage of 0.2V at 85°C, which are all essential properties for further resistive random access memory (RRAM) applications.

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Saleh MN, Venkatachalam DK, Belay K, Kim T, Elliman RG. Bistable resistive switching in hafnium-silicate thin films. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 185-186. 5699730. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699730

Bistable resistive switching in hafnium-silicate thin films

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