Blistering of H-implanted GaN

S. O. Kucheyev; J. S. Williams; C. Jagadish; J. Zou; G. Li

doi:10.1063/1.1430533

Blistering of H-implanted GaN

S. O. Kucheyev^*, J. S. Williams, C. Jagadish, J. Zou, G. Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: (i) ion energy (from 20 to 150 keV), (ii) ion dose (up to 1.2×10¹⁸cm^-2), (iii) implantation temperature (from -196 to 250°C), and (iv) annealing temperature (up to 900°C). Results show that both the onset of blistering and blistering surface patterns strongly depend on implant conditions. This study may have significant technological implications for ion slicing and "etching" of GaN using high-dose implantation with H ions.

Original language	English
Pages (from-to)	3928-3930
Number of pages	3
Journal	Journal of Applied Physics
Volume	91
Issue number	6
DOIs	https://doi.org/10.1063/1.1430533
Publication status	Published - 15 Mar 2002

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title = "Blistering of H-implanted GaN",

abstract = "Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: (i) ion energy (from 20 to 150 keV), (ii) ion dose (up to 1.2×1018cm-2), (iii) implantation temperature (from -196 to 250°C), and (iv) annealing temperature (up to 900°C). Results show that both the onset of blistering and blistering surface patterns strongly depend on implant conditions. This study may have significant technological implications for ion slicing and {"}etching{"} of GaN using high-dose implantation with H ions.",

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T1 - Blistering of H-implanted GaN

AU - Kucheyev, S. O.

AU - Williams, J. S.

AU - Jagadish, C.

AU - Zou, J.

AU - Li, G.

PY - 2002/3/15

Y1 - 2002/3/15

N2 - Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: (i) ion energy (from 20 to 150 keV), (ii) ion dose (up to 1.2×1018cm-2), (iii) implantation temperature (from -196 to 250°C), and (iv) annealing temperature (up to 900°C). Results show that both the onset of blistering and blistering surface patterns strongly depend on implant conditions. This study may have significant technological implications for ion slicing and "etching" of GaN using high-dose implantation with H ions.

AB - Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: (i) ion energy (from 20 to 150 keV), (ii) ion dose (up to 1.2×1018cm-2), (iii) implantation temperature (from -196 to 250°C), and (iv) annealing temperature (up to 900°C). Results show that both the onset of blistering and blistering surface patterns strongly depend on implant conditions. This study may have significant technological implications for ion slicing and "etching" of GaN using high-dose implantation with H ions.

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U2 - 10.1063/1.1430533

DO - 10.1063/1.1430533

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VL - 91

SP - 3928

EP - 3930

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Blistering of H-implanted GaN

Abstract

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