Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods

Guogang Zhang; Zhe Zhuang; Xu Guo; Fang Fang Ren; Bin Liu; Haixiong Ge; Zili Xie; Ling Sun; Ting Zhi; Tao Tao; Yi Li; Youdou Zheng; Rong Zhang

doi:10.1088/0957-4484/26/12/125201

Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods

Guogang Zhang, Zhe Zhuang, Xu Guo, Fang Fang Ren, Bin Liu, Haixiong Ge, Zili Xie, Ling Sun, Ting Zhi, Tao Tao, Yi Li, Youdou Zheng, Rong Zhang

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ultraviolet nanoimprint lithography. The intensity of light emission was found to be greatly enhanced due to the strong near-fields confined at the interface of Al/GaN and extended to the multiple quantum wells (MQWs) active region. The dynamics of carrier recombination and plasmon-enhanced Raman scattering were also investigated, providing a progressive view on the effective energy transfer between MQWs and surface plasmons.

Original language	English
Article number	125201
Journal	Nanotechnology
Volume	26
Issue number	12
DOIs	https://doi.org/10.1088/0957-4484/26/12/125201
Publication status	Published - 27 Mar 2015

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@article{06af27b01c304c8ca832fcf9295d3038,

title = "Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods",

abstract = "InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ultraviolet nanoimprint lithography. The intensity of light emission was found to be greatly enhanced due to the strong near-fields confined at the interface of Al/GaN and extended to the multiple quantum wells (MQWs) active region. The dynamics of carrier recombination and plasmon-enhanced Raman scattering were also investigated, providing a progressive view on the effective energy transfer between MQWs and surface plasmons.",

keywords = "Bloch surface plasmons, light-emitting diodes, photoluminescence",

author = "Guogang Zhang and Zhe Zhuang and Xu Guo and Ren, \{Fang Fang\} and Bin Liu and Haixiong Ge and Zili Xie and Ling Sun and Ting Zhi and Tao Tao and Yi Li and Youdou Zheng and Rong Zhang",

note = "Publisher Copyright: {\textcopyright} 2015 IOP Publishing Ltd.",

year = "2015",

month = mar,

day = "27",

doi = "10.1088/0957-4484/26/12/125201",

language = "English",

volume = "26",

journal = "Nanotechnology",

issn = "0957-4484",

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TY - JOUR

T1 - Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods

AU - Zhang, Guogang

AU - Zhuang, Zhe

AU - Guo, Xu

AU - Ren, Fang Fang

AU - Liu, Bin

AU - Ge, Haixiong

AU - Xie, Zili

AU - Sun, Ling

AU - Zhi, Ting

AU - Tao, Tao

AU - Li, Yi

AU - Zheng, Youdou

AU - Zhang, Rong

PY - 2015/3/27

Y1 - 2015/3/27

N2 - InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ultraviolet nanoimprint lithography. The intensity of light emission was found to be greatly enhanced due to the strong near-fields confined at the interface of Al/GaN and extended to the multiple quantum wells (MQWs) active region. The dynamics of carrier recombination and plasmon-enhanced Raman scattering were also investigated, providing a progressive view on the effective energy transfer between MQWs and surface plasmons.

AB - InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ultraviolet nanoimprint lithography. The intensity of light emission was found to be greatly enhanced due to the strong near-fields confined at the interface of Al/GaN and extended to the multiple quantum wells (MQWs) active region. The dynamics of carrier recombination and plasmon-enhanced Raman scattering were also investigated, providing a progressive view on the effective energy transfer between MQWs and surface plasmons.

KW - Bloch surface plasmons

KW - light-emitting diodes

KW - photoluminescence

UR - https://www.scopus.com/pages/publications/84924308499

U2 - 10.1088/0957-4484/26/12/125201

DO - 10.1088/0957-4484/26/12/125201

M3 - Article

SN - 0957-4484

VL - 26

JO - Nanotechnology

JF - Nanotechnology

IS - 12

M1 - 125201

ER -

Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods

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