@inproceedings{15d8a17735a2453b9d20ea6c2c7f3337,
title = "Boron diffusion in amorphous germanium",
abstract = "Rapid boron diffusion in amorphous germanium is observed during solid phase epitaxial regrowth. Boron diffusion in amorphous germanium is seen to increase approximately 4 orders of magnitude relative to amorphous silicon. Weak bonding between germanium and boron coupled with a distinct dopant profile indicate a different diffusion mechanism than that of boron in amorphous silicon.",
keywords = "Amorphous, Boron, Diffusion, Germanium, SPER",
author = "Edelman, {L. A.} and Jones, {K. S.} and Elliman, {R. G.} and Rubin, {L. M.}",
note = "Publisher Copyright: {\textcopyright} 2008 American Institute of Physics.; 17th International Conference on Ion Implantation Technology, IIT 2008 ; Conference date: 08-06-2008 Through 13-06-2008",
year = "2008",
doi = "10.1063/1.3033598",
language = "English",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
pages = "225--227",
editor = "Seebauer, {Edmund G.} and Amitabh Jain and Kondratenko, {Yevgeniy V.} and Felch, {Susan B.}",
booktitle = "Ion Implantation Technology 2008 - 17th International Conference on Ion Implantation Technology, IIT 2008",
address = "United States",
}